CMOS-process-independent average power dissipation macromodelling

P. J. Mather, P. Hallam, M. Brouwer

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

An accurate CMOS-process-independent average power dissipation macromodel is presented for the inverter and multiple input macros, including NAND, NOR, the transmission gate, pass gate and SRAM cell. A new macro activity time period is defined and accurate macro activity estimations are achieved without the need for analogue propagation delay simulation.

LanguageEnglish
Pages1337-1338
Number of pages2
JournalElectronics Letters
Volume31
Issue number16
DOIs
Publication statusPublished - 3 Aug 1995

Fingerprint

Macros
Energy dissipation
Static random access storage

Cite this

Mather, P. J. ; Hallam, P. ; Brouwer, M. / CMOS-process-independent average power dissipation macromodelling. In: Electronics Letters. 1995 ; Vol. 31, No. 16. pp. 1337-1338.
@article{7cbe8c3a8d7c479fb12d348fc9c5662d,
title = "CMOS-process-independent average power dissipation macromodelling",
abstract = "An accurate CMOS-process-independent average power dissipation macromodel is presented for the inverter and multiple input macros, including NAND, NOR, the transmission gate, pass gate and SRAM cell. A new macro activity time period is defined and accurate macro activity estimations are achieved without the need for analogue propagation delay simulation.",
keywords = "CMOS digital integrated circuits, Integrated circuit modelling",
author = "Mather, {P. J.} and P. Hallam and M. Brouwer",
year = "1995",
month = "8",
day = "3",
doi = "10.1049/el:19950914",
language = "English",
volume = "31",
pages = "1337--1338",
journal = "Electronics Letters",
issn = "0013-5194",
publisher = "IET",
number = "16",

}

CMOS-process-independent average power dissipation macromodelling. / Mather, P. J.; Hallam, P.; Brouwer, M.

In: Electronics Letters, Vol. 31, No. 16, 03.08.1995, p. 1337-1338.

Research output: Contribution to journalArticle

TY - JOUR

T1 - CMOS-process-independent average power dissipation macromodelling

AU - Mather, P. J.

AU - Hallam, P.

AU - Brouwer, M.

PY - 1995/8/3

Y1 - 1995/8/3

N2 - An accurate CMOS-process-independent average power dissipation macromodel is presented for the inverter and multiple input macros, including NAND, NOR, the transmission gate, pass gate and SRAM cell. A new macro activity time period is defined and accurate macro activity estimations are achieved without the need for analogue propagation delay simulation.

AB - An accurate CMOS-process-independent average power dissipation macromodel is presented for the inverter and multiple input macros, including NAND, NOR, the transmission gate, pass gate and SRAM cell. A new macro activity time period is defined and accurate macro activity estimations are achieved without the need for analogue propagation delay simulation.

KW - CMOS digital integrated circuits

KW - Integrated circuit modelling

UR - http://www.scopus.com/inward/record.url?scp=0029634624&partnerID=8YFLogxK

U2 - 10.1049/el:19950914

DO - 10.1049/el:19950914

M3 - Article

VL - 31

SP - 1337

EP - 1338

JO - Electronics Letters

T2 - Electronics Letters

JF - Electronics Letters

SN - 0013-5194

IS - 16

ER -