CMOS-process-independent average power dissipation macromodelling

P. J. Mather, P. Hallam, M. Brouwer

Research output: Contribution to journalArticle

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Abstract

An accurate CMOS-process-independent average power dissipation macromodel is presented for the inverter and multiple input macros, including NAND, NOR, the transmission gate, pass gate and SRAM cell. A new macro activity time period is defined and accurate macro activity estimations are achieved without the need for analogue propagation delay simulation.

Original languageEnglish
Pages (from-to)1337-1338
Number of pages2
JournalElectronics Letters
Volume31
Issue number16
DOIs
Publication statusPublished - 3 Aug 1995

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