Abstract
An accurate CMOS-process-independent average power dissipation macromodel is presented for the inverter and multiple input macros, including NAND, NOR, the transmission gate, pass gate and SRAM cell. A new macro activity time period is defined and accurate macro activity estimations are achieved without the need for analogue propagation delay simulation.
Original language | English |
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Pages (from-to) | 1337-1338 |
Number of pages | 2 |
Journal | Electronics Letters |
Volume | 31 |
Issue number | 16 |
DOIs | |
Publication status | Published - 3 Aug 1995 |