Combining dynamic modelling codes with medium energy ion scattering measurements to characterise plasma doping

J. England, W. Möller, J. A. van den Berg, A. Rossall, W. J. Min, J. Kim

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

© 2017 Elsevier B.V. Plasma doping ion implantation (PLAD) is becoming increasingly important in the manufacture of advanced semiconductor device structures but a fundamental understanding of PLAD is complicated. A model of PLAD into planar substrates has been constructed using the one dimensional computer code TRIDYN to predict collision cascades and hence substrate compositional changes during implantation. Medium Energy Ion Scattering (MEIS) measurements of dopant profiles in PLAD processed samples were used to calibrate the input ion and neutral fluxes to the model. Rules could then be proposed for how post implant profiles should be modified by a cleaning step. This learning was applied to a three dimensional TRI3DYN based model for PLAD implants into FinFET like structures. Comparison of the model to dopant profile measurements made by time of flight (TOF)-MEIS revealed the angular distributions of neutral species and doping mechanisms acting in three dimensional structures.
Original languageEnglish
Pages (from-to)60-64
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume409
Early online date2 Jun 2017
DOIs
Publication statusPublished - 15 Oct 2017

Fingerprint

ion scattering
Doping (additives)
Scattering
Plasmas
Ions
Ion implantation
Semiconductor device structures
profiles
energy
Angular distribution
Substrates
semiconductor devices
cleaning
learning
ion implantation
Cleaning
implantation
cascades
angular distribution
Fluxes

Cite this

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title = "Combining dynamic modelling codes with medium energy ion scattering measurements to characterise plasma doping",
abstract = "{\circledC} 2017 Elsevier B.V. Plasma doping ion implantation (PLAD) is becoming increasingly important in the manufacture of advanced semiconductor device structures but a fundamental understanding of PLAD is complicated. A model of PLAD into planar substrates has been constructed using the one dimensional computer code TRIDYN to predict collision cascades and hence substrate compositional changes during implantation. Medium Energy Ion Scattering (MEIS) measurements of dopant profiles in PLAD processed samples were used to calibrate the input ion and neutral fluxes to the model. Rules could then be proposed for how post implant profiles should be modified by a cleaning step. This learning was applied to a three dimensional TRI3DYN based model for PLAD implants into FinFET like structures. Comparison of the model to dopant profile measurements made by time of flight (TOF)-MEIS revealed the angular distributions of neutral species and doping mechanisms acting in three dimensional structures.",
keywords = "FinFET, Ion beam modelling, Ion-implantation, PLAD, Plasma doping, TRI3DYN, TRIDYN",
author = "J. England and W. M{\"o}ller and {van den Berg}, {J. A.} and A. Rossall and Min, {W. J.} and J. Kim",
year = "2017",
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TY - JOUR

T1 - Combining dynamic modelling codes with medium energy ion scattering measurements to characterise plasma doping

AU - England, J.

AU - Möller, W.

AU - van den Berg, J. A.

AU - Rossall, A.

AU - Min, W. J.

AU - Kim, J.

PY - 2017/10/15

Y1 - 2017/10/15

N2 - © 2017 Elsevier B.V. Plasma doping ion implantation (PLAD) is becoming increasingly important in the manufacture of advanced semiconductor device structures but a fundamental understanding of PLAD is complicated. A model of PLAD into planar substrates has been constructed using the one dimensional computer code TRIDYN to predict collision cascades and hence substrate compositional changes during implantation. Medium Energy Ion Scattering (MEIS) measurements of dopant profiles in PLAD processed samples were used to calibrate the input ion and neutral fluxes to the model. Rules could then be proposed for how post implant profiles should be modified by a cleaning step. This learning was applied to a three dimensional TRI3DYN based model for PLAD implants into FinFET like structures. Comparison of the model to dopant profile measurements made by time of flight (TOF)-MEIS revealed the angular distributions of neutral species and doping mechanisms acting in three dimensional structures.

AB - © 2017 Elsevier B.V. Plasma doping ion implantation (PLAD) is becoming increasingly important in the manufacture of advanced semiconductor device structures but a fundamental understanding of PLAD is complicated. A model of PLAD into planar substrates has been constructed using the one dimensional computer code TRIDYN to predict collision cascades and hence substrate compositional changes during implantation. Medium Energy Ion Scattering (MEIS) measurements of dopant profiles in PLAD processed samples were used to calibrate the input ion and neutral fluxes to the model. Rules could then be proposed for how post implant profiles should be modified by a cleaning step. This learning was applied to a three dimensional TRI3DYN based model for PLAD implants into FinFET like structures. Comparison of the model to dopant profile measurements made by time of flight (TOF)-MEIS revealed the angular distributions of neutral species and doping mechanisms acting in three dimensional structures.

KW - FinFET

KW - Ion beam modelling

KW - Ion-implantation

KW - PLAD

KW - Plasma doping

KW - TRI3DYN

KW - TRIDYN

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JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

ER -