Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants

D. Giubertoni, M. Bersani, M. Barozzi, S. Pederzoli, E. Iacob, J. A. van den Berg, M. Werner

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

SIMS and medium energy ion scattering (MEIS) have been applied to the characterization of ultra shallow distribution of arsenic in silicon obtained by ion implantation at 1 and 3 keV and successive annealing at low temperature (lower than 700 °C). In case of heavy elements in light matrices, the MEIS ultimate depth resolution and its ability to obtain quantitative results from first principles result in a good reference for SIMS depth profiling. The comparison of the results obtained by the two techniques allows to discriminate among different SIMS quantification processes in order to individuate the best in terms of accuracy in the initial transient width and at the SiO2-silicon interface: the simple normalization of 28Si75As- curve to the average of 28Si2 - results in the best agreement between SIMS and MEIS in the surface region. Moreover SIMS profile of the 3 keV as implanted sample resulted 1.9 nm shallower than correspondent MEIS profiles whereas samples annealed at either 650 °C or 700 °C for 10 s show a good alignment of the As segregation peak at the SiO2/Si interface. The sample annealed at 550 °C for 200 s shows a reduced shift between SIMS and MEIS measured As peak: a possible effect of the residual amorphous layer on the sputtering rate is pointed out as responsible of these different shifts.

Original languageEnglish
Pages (from-to)7214-7217
Number of pages4
JournalApplied Surface Science
Volume252
Issue number19
DOIs
Publication statusPublished - 30 Jul 2006
Externally publishedYes

Fingerprint

Arsenic
ion scattering
Secondary ion mass spectrometry
arsenic
secondary ion mass spectrometry
Scattering
Ions
Silicon
energy
Depth profiling
shift
silicon
heavy elements
profiles
Ion implantation
Sputtering
ion implantation
sputtering
alignment
Annealing

Cite this

Giubertoni, D. ; Bersani, M. ; Barozzi, M. ; Pederzoli, S. ; Iacob, E. ; van den Berg, J. A. ; Werner, M. / Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants. In: Applied Surface Science. 2006 ; Vol. 252, No. 19. pp. 7214-7217.
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Comparison between the SIMS and MEIS techniques for the characterization of ultra shallow arsenic implants. / Giubertoni, D.; Bersani, M.; Barozzi, M.; Pederzoli, S.; Iacob, E.; van den Berg, J. A.; Werner, M.

In: Applied Surface Science, Vol. 252, No. 19, 30.07.2006, p. 7214-7217.

Research output: Contribution to journalArticle

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AU - van den Berg, J. A.

AU - Werner, M.

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