Comparison of SiO2, Si3 N4, As2 S3, and Ge0.25 Se0.75 dielectric layers for InP- and GaAs-based material systems for midinfrared quantum cascade laser waveguides

G. Rehouma, C. A. Evans, Z. Ikonić, D. Indjin, P. Harrison

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5 Citations (Scopus)

Abstract

We present in this paper a direct comparison of the optical properties of InP- and GaAs-based quantum cascade laser waveguides operating in the midinfrared wavelength range. The absorption loss and optical confinement were calculated using a two-dimensional electromagnetic finite-element method. The effect on the waveguide properties of SiO2, Si3 N 4, As2 S3, and Ge0.25 Se 0.75 used as electrical insulation layers is investigated. The results indicate that a careful choice of this particular layer according to the geometrical structure and the emission wavelength should enhance the laser performance.

Original languageEnglish
Article number053104
JournalJournal of Applied Physics
Volume106
Issue number5
DOIs
Publication statusPublished - 1 Sep 2009
Externally publishedYes

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