Comparison of SiO2, Si3 N4, As2 S3, and Ge0.25 Se0.75 dielectric layers for InP- and GaAs-based material systems for midinfrared quantum cascade laser waveguides

G. Rehouma; C. A. Evans; Z. Ikonić; D. Indjin; P. Harrison

doi:10.1063/1.3197858

Comparison of SiO₂, Si₃ N₄, As₂ S₃, and Ge_0.25 Se_0.75 dielectric layers for InP- and GaAs-based material systems for midinfrared quantum cascade laser waveguides

G. Rehouma, C. A. Evans, Z. Ikonić, D. Indjin, P. Harrison

University of Leeds

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

We present in this paper a direct comparison of the optical properties of InP- and GaAs-based quantum cascade laser waveguides operating in the midinfrared wavelength range. The absorption loss and optical confinement were calculated using a two-dimensional electromagnetic finite-element method. The effect on the waveguide properties of SiO₂, Si₃ N ₄, As₂ S₃, and Ge_0.25 Se _0.75 used as electrical insulation layers is investigated. The results indicate that a careful choice of this particular layer according to the geometrical structure and the emission wavelength should enhance the laser performance.

Original language	English
Article number	053104
Journal	Journal of Applied Physics
Volume	106
Issue number	5
DOIs	https://doi.org/10.1063/1.3197858
Publication status	Published - 1 Sept 2009
Externally published	Yes

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title = "Comparison of SiO2, Si3 N4, As2 S3, and Ge0.25 Se0.75 dielectric layers for InP- and GaAs-based material systems for midinfrared quantum cascade laser waveguides",

abstract = "We present in this paper a direct comparison of the optical properties of InP- and GaAs-based quantum cascade laser waveguides operating in the midinfrared wavelength range. The absorption loss and optical confinement were calculated using a two-dimensional electromagnetic finite-element method. The effect on the waveguide properties of SiO2, Si3 N 4, As2 S3, and Ge0.25 Se 0.75 used as electrical insulation layers is investigated. The results indicate that a careful choice of this particular layer according to the geometrical structure and the emission wavelength should enhance the laser performance.",

keywords = "Gallium alloys, Germanium, Lasers, Quantum cascade lasers, Semiconducting gallium, Silicon compounds, Two dimensional, Waveguides",

author = "G. Rehouma and Evans, \{C. A.\} and Z. Ikoni{\'c} and D. Indjin and P. Harrison",

year = "2009",

month = sep,

day = "1",

doi = "10.1063/1.3197858",

language = "English",

volume = "106",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - Comparison of SiO2, Si3 N4, As2 S3, and Ge0.25 Se0.75 dielectric layers for InP- and GaAs-based material systems for midinfrared quantum cascade laser waveguides

AU - Rehouma, G.

AU - Evans, C. A.

AU - Ikonić, Z.

AU - Indjin, D.

AU - Harrison, P.

PY - 2009/9/1

Y1 - 2009/9/1

N2 - We present in this paper a direct comparison of the optical properties of InP- and GaAs-based quantum cascade laser waveguides operating in the midinfrared wavelength range. The absorption loss and optical confinement were calculated using a two-dimensional electromagnetic finite-element method. The effect on the waveguide properties of SiO2, Si3 N 4, As2 S3, and Ge0.25 Se 0.75 used as electrical insulation layers is investigated. The results indicate that a careful choice of this particular layer according to the geometrical structure and the emission wavelength should enhance the laser performance.

AB - We present in this paper a direct comparison of the optical properties of InP- and GaAs-based quantum cascade laser waveguides operating in the midinfrared wavelength range. The absorption loss and optical confinement were calculated using a two-dimensional electromagnetic finite-element method. The effect on the waveguide properties of SiO2, Si3 N 4, As2 S3, and Ge0.25 Se 0.75 used as electrical insulation layers is investigated. The results indicate that a careful choice of this particular layer according to the geometrical structure and the emission wavelength should enhance the laser performance.

KW - Gallium alloys

KW - Germanium

KW - Lasers

KW - Quantum cascade lasers

KW - Semiconducting gallium

KW - Silicon compounds

KW - Two dimensional

KW - Waveguides

UR - https://www.scopus.com/pages/publications/70349313587

U2 - 10.1063/1.3197858

DO - 10.1063/1.3197858

M3 - Article

AN - SCOPUS:70349313587

SN - 0021-8979

VL - 106

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

M1 - 053104

ER -

Comparison of SiO₂, Si₃ N₄, As₂ S₃, and Ge_0.25 Se_0.75 dielectric layers for InP- and GaAs-based material systems for midinfrared quantum cascade laser waveguides

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