Comparison of the quantum efficiencies of interwell and intrawell radiative transitions in quantum cascade lasers

K. Donovan; P. Harrison; R. W. Kelsall

doi:10.1063/1.124895

Comparison of the quantum efficiencies of interwell and intrawell radiative transitions in quantum cascade lasers

K. Donovan, P. Harrison, R. W. Kelsall

University of Leeds

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

A theoretical study has been made to compare the quantum efficiencies of interwell and intrawell radiative transitions in quantum cascade lasers based on Al𝑥Ga1−xAs/GaAs technology. Radiative and nonradiative intersubband transition rates were calculated for a range of temperatures between 1 and 300 k at an applied electric field of of 4 kV cm−1 for structures designed to emit in both mid-infrared and far-infrared frequency ranges. It is found that the internal quantum efficiency of mid-infrared devices is a maximum for diagonal, or interwell, transitions. Conversely, for the far-infrared devices, the quantum efficiency is a maximum for vertical, or intrawell, transitions.

Original language	English
Pages (from-to)	1999-2001
Number of pages	3
Journal	Applied Physics Letters
Volume	75
Issue number	14
Early online date	30 Sept 1999
DOIs	https://doi.org/10.1063/1.124895
Publication status	Published - 4 Oct 1999
Externally published	Yes

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title = "Comparison of the quantum efficiencies of interwell and intrawell radiative transitions in quantum cascade lasers",

abstract = "A theoretical study has been made to compare the quantum efficiencies of interwell and intrawell radiative transitions in quantum cascade lasers based on Al푥Ga1−xAs/GaAs technology. Radiative and nonradiative intersubband transition rates were calculated for a range of temperatures between 1 and 300 k at an applied electric field of of 4 kV cm−1 for structures designed to emit in both mid-infrared and far-infrared frequency ranges. It is found that the internal quantum efficiency of mid-infrared devices is a maximum for diagonal, or interwell, transitions. Conversely, for the far-infrared devices, the quantum efficiency is a maximum for vertical, or intrawell, transitions.",

keywords = "Band structure, Computational methods, Electric field effects, Electron transitions, Quantum efficiency, Semiconducting aluminum compounds, Semiconducting gallium arsenide, Semiconductor device structures, Thermal effects",

author = "K. Donovan and P. Harrison and Kelsall, \{R. W.\}",

year = "1999",

month = oct,

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doi = "10.1063/1.124895",

language = "English",

volume = "75",

pages = "1999--2001",

journal = "Applied Physics Letters",

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T1 - Comparison of the quantum efficiencies of interwell and intrawell radiative transitions in quantum cascade lasers

AU - Donovan, K.

AU - Harrison, P.

AU - Kelsall, R. W.

PY - 1999/10/4

Y1 - 1999/10/4

N2 - A theoretical study has been made to compare the quantum efficiencies of interwell and intrawell radiative transitions in quantum cascade lasers based on Al푥Ga1−xAs/GaAs technology. Radiative and nonradiative intersubband transition rates were calculated for a range of temperatures between 1 and 300 k at an applied electric field of of 4 kV cm−1 for structures designed to emit in both mid-infrared and far-infrared frequency ranges. It is found that the internal quantum efficiency of mid-infrared devices is a maximum for diagonal, or interwell, transitions. Conversely, for the far-infrared devices, the quantum efficiency is a maximum for vertical, or intrawell, transitions.

AB - A theoretical study has been made to compare the quantum efficiencies of interwell and intrawell radiative transitions in quantum cascade lasers based on Al푥Ga1−xAs/GaAs technology. Radiative and nonradiative intersubband transition rates were calculated for a range of temperatures between 1 and 300 k at an applied electric field of of 4 kV cm−1 for structures designed to emit in both mid-infrared and far-infrared frequency ranges. It is found that the internal quantum efficiency of mid-infrared devices is a maximum for diagonal, or interwell, transitions. Conversely, for the far-infrared devices, the quantum efficiency is a maximum for vertical, or intrawell, transitions.

KW - Band structure

KW - Computational methods

KW - Electric field effects

KW - Electron transitions

KW - Quantum efficiency

KW - Semiconducting aluminum compounds

KW - Semiconducting gallium arsenide

KW - Semiconductor device structures

KW - Thermal effects

UR - https://www.scopus.com/pages/publications/0032606661

U2 - 10.1063/1.124895

DO - 10.1063/1.124895

M3 - Article

AN - SCOPUS:0032606661

SN - 0003-6951

VL - 75

SP - 1999

EP - 2001

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 14

ER -

Comparison of the quantum efficiencies of interwell and intrawell radiative transitions in quantum cascade lasers

Abstract

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