Composition and structure of the native Si oxide by high depth resolution medium energy ion scatering

Amir H. Al-Bayati, Kevin G. Orrman-Rossiter, J. A. van den Berg, D. G. Armour

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Abstract

The structure and composition of the native Si oxide were studied using high depth resolution medium energy ion scattering (MEIS) spectrometry. The analysis revealed that the oxide is an amorphous material of thickness 20 Å. The results showed qualitatively that the interface between the oxide and the underlying structure consists of layers of Si atoms displaced from their normal lattice sites. The composition of the native Si oxide varies with depth. The region near the surface is more highly oxidized than that near the interface. However, based on the assumption that there are two nonregistered Si layers in the interface, the results showed that the oxide consists of a layer of stoichiometric SiO2 of thickness ∼ 7 Å and a layer of suboxide (SiOx, x < 2) of thic ∼ 6 Å.

Original languageEnglish
Pages (from-to)91-102
Number of pages12
JournalSurface Science
Volume241
Issue number1-2
DOIs
Publication statusPublished - 1 Jan 1991
Externally publishedYes

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Oxides
Ions
oxides
Chemical analysis
ions
energy
amorphous materials
ion scattering
Spectrometry
Scattering
Atoms
spectroscopy
atoms

Cite this

Al-Bayati, Amir H. ; Orrman-Rossiter, Kevin G. ; van den Berg, J. A. ; Armour, D. G. / Composition and structure of the native Si oxide by high depth resolution medium energy ion scatering. In: Surface Science. 1991 ; Vol. 241, No. 1-2. pp. 91-102.
@article{ef075d3012264b9fbedb75de825c9240,
title = "Composition and structure of the native Si oxide by high depth resolution medium energy ion scatering",
abstract = "The structure and composition of the native Si oxide were studied using high depth resolution medium energy ion scattering (MEIS) spectrometry. The analysis revealed that the oxide is an amorphous material of thickness 20 {\AA}. The results showed qualitatively that the interface between the oxide and the underlying structure consists of layers of Si atoms displaced from their normal lattice sites. The composition of the native Si oxide varies with depth. The region near the surface is more highly oxidized than that near the interface. However, based on the assumption that there are two nonregistered Si layers in the interface, the results showed that the oxide consists of a layer of stoichiometric SiO2 of thickness ∼ 7 {\AA} and a layer of suboxide (SiOx, x < 2) of thic ∼ 6 {\AA}.",
author = "Al-Bayati, {Amir H.} and Orrman-Rossiter, {Kevin G.} and {van den Berg}, {J. A.} and Armour, {D. G.}",
year = "1991",
month = "1",
day = "1",
doi = "10.1016/0039-6028(91)90214-D",
language = "English",
volume = "241",
pages = "91--102",
journal = "Surface Science",
issn = "0039-6028",
publisher = "Elsevier",
number = "1-2",

}

Composition and structure of the native Si oxide by high depth resolution medium energy ion scatering. / Al-Bayati, Amir H.; Orrman-Rossiter, Kevin G.; van den Berg, J. A.; Armour, D. G.

In: Surface Science, Vol. 241, No. 1-2, 01.01.1991, p. 91-102.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Composition and structure of the native Si oxide by high depth resolution medium energy ion scatering

AU - Al-Bayati, Amir H.

AU - Orrman-Rossiter, Kevin G.

AU - van den Berg, J. A.

AU - Armour, D. G.

PY - 1991/1/1

Y1 - 1991/1/1

N2 - The structure and composition of the native Si oxide were studied using high depth resolution medium energy ion scattering (MEIS) spectrometry. The analysis revealed that the oxide is an amorphous material of thickness 20 Å. The results showed qualitatively that the interface between the oxide and the underlying structure consists of layers of Si atoms displaced from their normal lattice sites. The composition of the native Si oxide varies with depth. The region near the surface is more highly oxidized than that near the interface. However, based on the assumption that there are two nonregistered Si layers in the interface, the results showed that the oxide consists of a layer of stoichiometric SiO2 of thickness ∼ 7 Å and a layer of suboxide (SiOx, x < 2) of thic ∼ 6 Å.

AB - The structure and composition of the native Si oxide were studied using high depth resolution medium energy ion scattering (MEIS) spectrometry. The analysis revealed that the oxide is an amorphous material of thickness 20 Å. The results showed qualitatively that the interface between the oxide and the underlying structure consists of layers of Si atoms displaced from their normal lattice sites. The composition of the native Si oxide varies with depth. The region near the surface is more highly oxidized than that near the interface. However, based on the assumption that there are two nonregistered Si layers in the interface, the results showed that the oxide consists of a layer of stoichiometric SiO2 of thickness ∼ 7 Å and a layer of suboxide (SiOx, x < 2) of thic ∼ 6 Å.

UR - http://www.scopus.com/inward/record.url?scp=0025889523&partnerID=8YFLogxK

U2 - 10.1016/0039-6028(91)90214-D

DO - 10.1016/0039-6028(91)90214-D

M3 - Article

VL - 241

SP - 91

EP - 102

JO - Surface Science

JF - Surface Science

SN - 0039-6028

IS - 1-2

ER -