Composition and Structure of Zirconium Nitride Films Produced by Ion Assisted Deposition

R. Valizadeh; J. S. Colligon; S. E. Donnelly; C. A. Faunce; D. Park; H. Kheyrandish

doi:10.1557/PROC-354-81

Composition and Structure of Zirconium Nitride Films Produced by Ion Assisted Deposition

R. Valizadeh, J. S. Colligon, S. E. Donnelly, C. A. Faunce, D. Park, H. Kheyrandish

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

The growth mechanism of ZrN_x films produced by reactive ion beam sputtering with or without concurrent low energy ion bombardment of argon or nitrogen has been investigated. The effect of substrate temperature in the range of 300-680K, partial pressure of nitrogen and ion/atom arrival rate on the composition and microstructure of the films have been studied. RBS analysis has confirmed that the nitrogen content varies over wide range 0-60 at.%, depending on the nitrogen/zirconium arrival rate, and the ion assist flux but it is independent of the ion assist energy. TEM analysis shows that the films are non-columnar and polycrystalline with grain sizes 1-15nm which depend on the nitrogen content and the deposition temperature.

Original language	English
Pages (from-to)	81-86
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	354
DOIs	https://doi.org/10.1557/PROC-354-81
Publication status	Published - 1 Dec 1994
Externally published	Yes
Event	1994 MRS Fall Meeting: Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization - Boston, United States Duration: 28 Nov 1994 → 2 Dec 1994

Access to Document

10.1557/PROC-354-81Licence: Unspecified

Cite this

@article{1bdb3ff7d81a4dd198103e6773ddbe13,

title = "Composition and Structure of Zirconium Nitride Films Produced by Ion Assisted Deposition",

abstract = "The growth mechanism of ZrNx films produced by reactive ion beam sputtering with or without concurrent low energy ion bombardment of argon or nitrogen has been investigated. The effect of substrate temperature in the range of 300-680K, partial pressure of nitrogen and ion/atom arrival rate on the composition and microstructure of the films have been studied. RBS analysis has confirmed that the nitrogen content varies over wide range 0-60 at.%, depending on the nitrogen/zirconium arrival rate, and the ion assist flux but it is independent of the ion assist energy. TEM analysis shows that the films are non-columnar and polycrystalline with grain sizes 1-15nm which depend on the nitrogen content and the deposition temperature.",

keywords = "Argon, Composition, Deposition, Ion bombardment, Magnetron sputtering, Nitrogen, Structure (composition), Temperature, Transmission electron microscopy, Zirconium compounds",

author = "R. Valizadeh and Colligon, {J. S.} and Donnelly, {S. E.} and Faunce, {C. A.} and D. Park and H. Kheyrandish",

year = "1994",

month = dec,

day = "1",

doi = "10.1557/PROC-354-81",

language = "English",

volume = "354",

pages = "81--86",

journal = "MRS Online Proceedings Library",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "1994 MRS Fall Meeting : Symposium A – Beam Solid Interactions for Materials Synthesis and Characterization ; Conference date: 28-11-1994 Through 02-12-1994",

}

TY - JOUR

T1 - Composition and Structure of Zirconium Nitride Films Produced by Ion Assisted Deposition

AU - Valizadeh, R.

AU - Colligon, J. S.

AU - Donnelly, S. E.

AU - Faunce, C. A.

AU - Park, D.

AU - Kheyrandish, H.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - The growth mechanism of ZrNx films produced by reactive ion beam sputtering with or without concurrent low energy ion bombardment of argon or nitrogen has been investigated. The effect of substrate temperature in the range of 300-680K, partial pressure of nitrogen and ion/atom arrival rate on the composition and microstructure of the films have been studied. RBS analysis has confirmed that the nitrogen content varies over wide range 0-60 at.%, depending on the nitrogen/zirconium arrival rate, and the ion assist flux but it is independent of the ion assist energy. TEM analysis shows that the films are non-columnar and polycrystalline with grain sizes 1-15nm which depend on the nitrogen content and the deposition temperature.

AB - The growth mechanism of ZrNx films produced by reactive ion beam sputtering with or without concurrent low energy ion bombardment of argon or nitrogen has been investigated. The effect of substrate temperature in the range of 300-680K, partial pressure of nitrogen and ion/atom arrival rate on the composition and microstructure of the films have been studied. RBS analysis has confirmed that the nitrogen content varies over wide range 0-60 at.%, depending on the nitrogen/zirconium arrival rate, and the ion assist flux but it is independent of the ion assist energy. TEM analysis shows that the films are non-columnar and polycrystalline with grain sizes 1-15nm which depend on the nitrogen content and the deposition temperature.

KW - Argon

KW - Composition

KW - Deposition

KW - Ion bombardment

KW - Magnetron sputtering

KW - Nitrogen

KW - Structure (composition)

KW - Temperature

KW - Transmission electron microscopy

KW - Zirconium compounds

UR - http://www.scopus.com/inward/record.url?scp=0029516001&partnerID=8YFLogxK

U2 - 10.1557/PROC-354-81

DO - 10.1557/PROC-354-81

M3 - Conference article

AN - SCOPUS:0029516001

VL - 354

SP - 81

EP - 86

JO - MRS Online Proceedings Library

JF - MRS Online Proceedings Library

SN - 0272-9172

T2 - 1994 MRS Fall Meeting

Y2 - 28 November 1994 through 2 December 1994

ER -

Composition and Structure of Zirconium Nitride Films Produced by Ion Assisted Deposition

Abstract

Access to Document

Other files and links

Fingerprint

Cite this