Composition, volume, and aspect ratio dependence of the strain distribution, band lineups and electron effective masses in self-assembled pyramidal In1-xGaxAs/GaAs and SixGe1-x/Si quantum dots

M. Califano, P. Harrison

Research output: Contribution to journalArticlepeer-review

47 Citations (Scopus)

Abstract

We present a systematic investigation of the strain distribution of self-assembled pyramidal In1-xGaxAs/GaAs and SixGe1-x/Si quantum dots for the case of growth on a (001) substrate. The dependence of the biaxial and hydrostatic components of the strain on the quantum dot volume, aspect ratio, composition, and percentage of alloying x is studied using a method based on a Green's function technique. The dependence of the carriers' confining potentials and the electronic effective mass on the same parameters is then calculated in the framework of eight-band kp theory. The results for which comparable published data are available are in good agreement with the theoretical values for strain profiles, confining potentials, and electronic effective mass.

Original languageEnglish
Pages (from-to)389-398
Number of pages10
JournalJournal of Applied Physics
Volume91
Issue number1
Early online date20 Dec 2001
DOIs
Publication statusPublished - 1 Jan 2002
Externally publishedYes

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