Contribution of atomic and molecular ions to dry-etch damage

L. G. Deng, M. Rahman, J. A. Van Den Berg, C. D.W. Wilkinson

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Using ions of low energy is accepted as an essential requirement in achieving low damage when dry-etching III-V semiconductors. SiCl4 is widely used to make GaAs electron devices. We have studied the effect of a SiCl4 reactive ion etching environment as well as the effect of the bombardment by the separate constituent ions from a SiCl4 discharge in a low-energy implanter. Photoluminescence intensity measurements from GaAs/AlGaAs quantum well probe structures have been used to study the damage inflicted. We find that molecular ions contribute less to deep damage than do atomic ions. Thus, low damage may be promoted by selecting reactive etch chemistries with low ion energies and small atomic to molecular ion fractions.

Original languageEnglish
Pages (from-to)211-213
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number2
Early online date6 Jul 1999
DOIs
Publication statusPublished - 12 Jul 1999
Externally publishedYes

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molecular ions
damage
ions
etching
aluminum gallium arsenides
energy
bombardment
quantum wells
chemistry
photoluminescence
requirements
probes
electrons

Cite this

Deng, L. G. ; Rahman, M. ; Van Den Berg, J. A. ; Wilkinson, C. D.W. / Contribution of atomic and molecular ions to dry-etch damage. In: Applied Physics Letters. 1999 ; Vol. 75, No. 2. pp. 211-213.
@article{1b60b13e57b94602bb4a639350a14814,
title = "Contribution of atomic and molecular ions to dry-etch damage",
abstract = "Using ions of low energy is accepted as an essential requirement in achieving low damage when dry-etching III-V semiconductors. SiCl4 is widely used to make GaAs electron devices. We have studied the effect of a SiCl4 reactive ion etching environment as well as the effect of the bombardment by the separate constituent ions from a SiCl4 discharge in a low-energy implanter. Photoluminescence intensity measurements from GaAs/AlGaAs quantum well probe structures have been used to study the damage inflicted. We find that molecular ions contribute less to deep damage than do atomic ions. Thus, low damage may be promoted by selecting reactive etch chemistries with low ion energies and small atomic to molecular ion fractions.",
author = "Deng, {L. G.} and M. Rahman and {Van Den Berg}, {J. A.} and Wilkinson, {C. D.W.}",
year = "1999",
month = "7",
day = "12",
doi = "10.1063/1.124322",
language = "English",
volume = "75",
pages = "211--213",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

Contribution of atomic and molecular ions to dry-etch damage. / Deng, L. G.; Rahman, M.; Van Den Berg, J. A.; Wilkinson, C. D.W.

In: Applied Physics Letters, Vol. 75, No. 2, 12.07.1999, p. 211-213.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Contribution of atomic and molecular ions to dry-etch damage

AU - Deng, L. G.

AU - Rahman, M.

AU - Van Den Berg, J. A.

AU - Wilkinson, C. D.W.

PY - 1999/7/12

Y1 - 1999/7/12

N2 - Using ions of low energy is accepted as an essential requirement in achieving low damage when dry-etching III-V semiconductors. SiCl4 is widely used to make GaAs electron devices. We have studied the effect of a SiCl4 reactive ion etching environment as well as the effect of the bombardment by the separate constituent ions from a SiCl4 discharge in a low-energy implanter. Photoluminescence intensity measurements from GaAs/AlGaAs quantum well probe structures have been used to study the damage inflicted. We find that molecular ions contribute less to deep damage than do atomic ions. Thus, low damage may be promoted by selecting reactive etch chemistries with low ion energies and small atomic to molecular ion fractions.

AB - Using ions of low energy is accepted as an essential requirement in achieving low damage when dry-etching III-V semiconductors. SiCl4 is widely used to make GaAs electron devices. We have studied the effect of a SiCl4 reactive ion etching environment as well as the effect of the bombardment by the separate constituent ions from a SiCl4 discharge in a low-energy implanter. Photoluminescence intensity measurements from GaAs/AlGaAs quantum well probe structures have been used to study the damage inflicted. We find that molecular ions contribute less to deep damage than do atomic ions. Thus, low damage may be promoted by selecting reactive etch chemistries with low ion energies and small atomic to molecular ion fractions.

UR - http://www.scopus.com/inward/record.url?scp=0010189521&partnerID=8YFLogxK

U2 - 10.1063/1.124322

DO - 10.1063/1.124322

M3 - Article

VL - 75

SP - 211

EP - 213

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 2

ER -