Copper indium diselenide

Crystallography and radiation-induced dislocation loops

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

Copper indium diselenide (CIS) is a prime candidate as the absorber layer in solar cells for use in extraterrestrial environments due to its good photovoltaic efficiency and ability to resist radiation damage. While CIS-based devices have been tested extensively in the laboratory using electron and proton irradiation, there is still little understanding of the underlying mechanisms which give rise to its radiation hardness. To gain better insight into the response of CIS to displacing radiation, transmission electron microscope samples have been irradiated in situ with 400 keV Xe ions at the Intermediate Voltage Electron Microscope facility at Argonne National Laboratory, USA. At room temperature, dislocation loops were observed to form and grow with increasing fluence. These loops have been investigated using g b techniques and inside/outside contrast analysis. They have been found to reside on {112} planes and to be interstitial in nature. The Burgers vector were calculated as b = 1/6 221. The compositional content of these interstitial loops was found to be indistinguishable from the surrounding matrix within the sensitivity of the techniques used. To facilitate this work, experimental electron-diffraction zone-axis pattern maps were produced and these are also presented, along with analysis of the [100] zone-axis pattern.

Original languageEnglish
Pages (from-to)517-536
Number of pages20
JournalPhilosophical Magazine
Volume91
Issue number4
Early online date17 Nov 2010
DOIs
Publication statusPublished - 1 Feb 2011
Externally publishedYes

Fingerprint

crystallography
indium
copper
interstitials
radiation
extraterrestrial environments
electron microscopes
proton irradiation
electron irradiation
radiation damage
absorbers
fluence
hardness
electron diffraction
solar cells
sensitivity
electric potential
room temperature
matrices
ions

Cite this

@article{b13a4913099842708a8d6498b15618fc,
title = "Copper indium diselenide: Crystallography and radiation-induced dislocation loops",
abstract = "Copper indium diselenide (CIS) is a prime candidate as the absorber layer in solar cells for use in extraterrestrial environments due to its good photovoltaic efficiency and ability to resist radiation damage. While CIS-based devices have been tested extensively in the laboratory using electron and proton irradiation, there is still little understanding of the underlying mechanisms which give rise to its radiation hardness. To gain better insight into the response of CIS to displacing radiation, transmission electron microscope samples have been irradiated in situ with 400 keV Xe ions at the Intermediate Voltage Electron Microscope facility at Argonne National Laboratory, USA. At room temperature, dislocation loops were observed to form and grow with increasing fluence. These loops have been investigated using g b techniques and inside/outside contrast analysis. They have been found to reside on {112} planes and to be interstitial in nature. The Burgers vector were calculated as b = 1/6 221. The compositional content of these interstitial loops was found to be indistinguishable from the surrounding matrix within the sensitivity of the techniques used. To facilitate this work, experimental electron-diffraction zone-axis pattern maps were produced and these are also presented, along with analysis of the [100] zone-axis pattern.",
keywords = "CIS, copper indium diselenide, crystallography, CuInSe2, defect analysis, dislocation structures, electron diffraction, ion irradiation, radiation damage, semiconductors, TEM",
author = "Hinks, {J. A.} and Donnelly, {S. E.}",
year = "2011",
month = "2",
day = "1",
doi = "10.1080/14786435.2010.525542",
language = "English",
volume = "91",
pages = "517--536",
journal = "Philosophical Magazine",
issn = "1478-6435",
publisher = "Taylor and Francis Ltd.",
number = "4",

}

Copper indium diselenide : Crystallography and radiation-induced dislocation loops. / Hinks, J. A.; Donnelly, S. E.

In: Philosophical Magazine, Vol. 91, No. 4, 01.02.2011, p. 517-536.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Copper indium diselenide

T2 - Crystallography and radiation-induced dislocation loops

AU - Hinks, J. A.

AU - Donnelly, S. E.

PY - 2011/2/1

Y1 - 2011/2/1

N2 - Copper indium diselenide (CIS) is a prime candidate as the absorber layer in solar cells for use in extraterrestrial environments due to its good photovoltaic efficiency and ability to resist radiation damage. While CIS-based devices have been tested extensively in the laboratory using electron and proton irradiation, there is still little understanding of the underlying mechanisms which give rise to its radiation hardness. To gain better insight into the response of CIS to displacing radiation, transmission electron microscope samples have been irradiated in situ with 400 keV Xe ions at the Intermediate Voltage Electron Microscope facility at Argonne National Laboratory, USA. At room temperature, dislocation loops were observed to form and grow with increasing fluence. These loops have been investigated using g b techniques and inside/outside contrast analysis. They have been found to reside on {112} planes and to be interstitial in nature. The Burgers vector were calculated as b = 1/6 221. The compositional content of these interstitial loops was found to be indistinguishable from the surrounding matrix within the sensitivity of the techniques used. To facilitate this work, experimental electron-diffraction zone-axis pattern maps were produced and these are also presented, along with analysis of the [100] zone-axis pattern.

AB - Copper indium diselenide (CIS) is a prime candidate as the absorber layer in solar cells for use in extraterrestrial environments due to its good photovoltaic efficiency and ability to resist radiation damage. While CIS-based devices have been tested extensively in the laboratory using electron and proton irradiation, there is still little understanding of the underlying mechanisms which give rise to its radiation hardness. To gain better insight into the response of CIS to displacing radiation, transmission electron microscope samples have been irradiated in situ with 400 keV Xe ions at the Intermediate Voltage Electron Microscope facility at Argonne National Laboratory, USA. At room temperature, dislocation loops were observed to form and grow with increasing fluence. These loops have been investigated using g b techniques and inside/outside contrast analysis. They have been found to reside on {112} planes and to be interstitial in nature. The Burgers vector were calculated as b = 1/6 221. The compositional content of these interstitial loops was found to be indistinguishable from the surrounding matrix within the sensitivity of the techniques used. To facilitate this work, experimental electron-diffraction zone-axis pattern maps were produced and these are also presented, along with analysis of the [100] zone-axis pattern.

KW - CIS

KW - copper indium diselenide

KW - crystallography

KW - CuInSe2

KW - defect analysis

KW - dislocation structures

KW - electron diffraction

KW - ion irradiation

KW - radiation damage

KW - semiconductors

KW - TEM

UR - http://www.scopus.com/inward/record.url?scp=78751486475&partnerID=8YFLogxK

U2 - 10.1080/14786435.2010.525542

DO - 10.1080/14786435.2010.525542

M3 - Article

VL - 91

SP - 517

EP - 536

JO - Philosophical Magazine

JF - Philosophical Magazine

SN - 1478-6435

IS - 4

ER -