Cross-sectional transmission electron microscopy studies of boron ion implantation in hexagonal boron nitride: English

Emily Aradi; S. R. Naidoo; F Cummings; I. Motochi; Trevor E. Derry

doi:10.1016/j.diamond.2018.12.020

Cross-sectional transmission electron microscopy studies of boron ion implantation in hexagonal boron nitride: English

Emily Aradi, S. R. Naidoo, F Cummings, I. Motochi, Trevor E. Derry

Research output: Contribution to journal › Article › peer-review

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Abstract

We have reported on the implantation of boron ion into hexagonal boron nitride (h-BN) material to aid the nucleation of cubic boron nitride nanocrystals (nc-BN).Single crystal h-BN was implanted with boron ion at 150 keV at fluences of the order of 1015 and 1017 ions/cm2 at room temperature. High Angle Annular Dark-Field Scanning Transmission Electron Microscopy (HAADF-STEM) mapping showed a variation in image contrast in samples irradiated to a fluence of 1 × 1015 ions/cm2. As predicted by Stopping Range and Ions in Materials (SRIM) calculations, the implanted region with the highest damage density appeared to have a bright contrast in HAADF-STEM which represented the high density c-BN symmetry. High Resolution Transmission Electron Microscopy (HRTEM) and electron diffraction measurements showed regions with nc-BN for samples implanted with low fluences and amorphous BN after implantation with high fluences indicating a fluence-related phase transition in BN. Raman spectroscopy showed the emergence of longitudinal optical frequency mode associated with c-BN after implantation.

Original language	English
Pages (from-to)	168-173
Number of pages	6
Journal	Diamond and Related Materials
Volume	92
Early online date	21 Dec 2018
DOIs	https://doi.org/10.1016/j.diamond.2018.12.020
Publication status	Published - Feb 2019

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title = "Cross-sectional transmission electron microscopy studies of boron ion implantation in hexagonal boron nitride: English",

abstract = "We have reported on the implantation of boron ion into hexagonal boron nitride (h-BN) material to aid the nucleation of cubic boron nitride nanocrystals (nc-BN).Single crystal h-BN was implanted with boron ion at 150 keV at fluences of the order of 1015 and 1017 ions/cm2 at room temperature. High Angle Annular Dark-Field Scanning Transmission Electron Microscopy (HAADF-STEM) mapping showed a variation in image contrast in samples irradiated to a fluence of 1 × 1015 ions/cm2. As predicted by Stopping Range and Ions in Materials (SRIM) calculations, the implanted region with the highest damage density appeared to have a bright contrast in HAADF-STEM which represented the high density c-BN symmetry. High Resolution Transmission Electron Microscopy (HRTEM) and electron diffraction measurements showed regions with nc-BN for samples implanted with low fluences and amorphous BN after implantation with high fluences indicating a fluence-related phase transition in BN. Raman spectroscopy showed the emergence of longitudinal optical frequency mode associated with c-BN after implantation. ",

keywords = "Boron nitride, Transmission electron microscopy (TEM), Ion implantation",

author = "Emily Aradi and Naidoo, {S. R.} and F Cummings and I. Motochi and Derry, {Trevor E.}",

year = "2019",

month = feb,

doi = "10.1016/j.diamond.2018.12.020",

language = "English",

volume = "92",

pages = "168--173",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

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TY - JOUR

T1 - Cross-sectional transmission electron microscopy studies of boron ion implantation in hexagonal boron nitride

T2 - English

AU - Aradi, Emily

AU - Naidoo, S. R.

AU - Cummings, F

AU - Motochi, I.

AU - Derry, Trevor E.

PY - 2019/2

Y1 - 2019/2

N2 - We have reported on the implantation of boron ion into hexagonal boron nitride (h-BN) material to aid the nucleation of cubic boron nitride nanocrystals (nc-BN).Single crystal h-BN was implanted with boron ion at 150 keV at fluences of the order of 1015 and 1017 ions/cm2 at room temperature. High Angle Annular Dark-Field Scanning Transmission Electron Microscopy (HAADF-STEM) mapping showed a variation in image contrast in samples irradiated to a fluence of 1 × 1015 ions/cm2. As predicted by Stopping Range and Ions in Materials (SRIM) calculations, the implanted region with the highest damage density appeared to have a bright contrast in HAADF-STEM which represented the high density c-BN symmetry. High Resolution Transmission Electron Microscopy (HRTEM) and electron diffraction measurements showed regions with nc-BN for samples implanted with low fluences and amorphous BN after implantation with high fluences indicating a fluence-related phase transition in BN. Raman spectroscopy showed the emergence of longitudinal optical frequency mode associated with c-BN after implantation.

AB - We have reported on the implantation of boron ion into hexagonal boron nitride (h-BN) material to aid the nucleation of cubic boron nitride nanocrystals (nc-BN).Single crystal h-BN was implanted with boron ion at 150 keV at fluences of the order of 1015 and 1017 ions/cm2 at room temperature. High Angle Annular Dark-Field Scanning Transmission Electron Microscopy (HAADF-STEM) mapping showed a variation in image contrast in samples irradiated to a fluence of 1 × 1015 ions/cm2. As predicted by Stopping Range and Ions in Materials (SRIM) calculations, the implanted region with the highest damage density appeared to have a bright contrast in HAADF-STEM which represented the high density c-BN symmetry. High Resolution Transmission Electron Microscopy (HRTEM) and electron diffraction measurements showed regions with nc-BN for samples implanted with low fluences and amorphous BN after implantation with high fluences indicating a fluence-related phase transition in BN. Raman spectroscopy showed the emergence of longitudinal optical frequency mode associated with c-BN after implantation.

KW - Boron nitride

KW - Transmission electron microscopy (TEM)

KW - Ion implantation

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U2 - 10.1016/j.diamond.2018.12.020

DO - 10.1016/j.diamond.2018.12.020

M3 - Article

VL - 92

SP - 168

EP - 173

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

ER -

Cross-sectional transmission electron microscopy studies of boron ion implantation in hexagonal boron nitride: English

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