Cross-sectional transmission electron microscopy studies of boron ion implantation in hexagonal boron nitride

English

Emily Aradi, S. R. Naidoo, F Cummings, I. Motochi, Trevor E. Derry

Research output: Contribution to journalArticle

Abstract

We have reported on the implantation of boron ion into hexagonal boron nitride (h-BN) material to aid the nucleation of cubic boron nitride nanocrystals (nc-BN).Single crystal h-BN was implanted with boron ion at 150 keV at fluences of the order of 1015 and 1017 ions/cm2 at room temperature. High Angle Annular Dark-Field Scanning Transmission Electron Microscopy (HAADF-STEM) mapping showed a variation in image contrast in samples irradiated to a fluence of 1 × 1015 ions/cm2. As predicted by Stopping Range and Ions in Materials (SRIM) calculations, the implanted region with the highest damage density appeared to have a bright contrast in HAADF-STEM which represented the high density c-BN symmetry. High Resolution Transmission Electron Microscopy (HRTEM) and electron diffraction measurements showed regions with nc-BN for samples implanted with low fluences and amorphous BN after implantation with high fluences indicating a fluence-related phase transition in BN. Raman spectroscopy showed the emergence of longitudinal optical frequency mode associated with c-BN after implantation.
Original languageEnglish
Pages (from-to)168-173
Number of pages6
JournalDiamond and Related Materials
Volume92
Early online date21 Dec 2018
DOIs
Publication statusPublished - Feb 2019

Fingerprint

Boron
Boron nitride
Ion implantation
Cubic boron nitride
Ions
Transmission electron microscopy
Nanocrystals
Nucleation
Scanning electron microscopy
High resolution transmission electron microscopy
Electron diffraction
Raman spectroscopy
Phase transitions
Single crystals
boron nitride
Temperature

Cite this

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abstract = "We have reported on the implantation of boron ion into hexagonal boron nitride (h-BN) material to aid the nucleation of cubic boron nitride nanocrystals (nc-BN).Single crystal h-BN was implanted with boron ion at 150 keV at fluences of the order of 1015 and 1017 ions/cm2 at room temperature. High Angle Annular Dark-Field Scanning Transmission Electron Microscopy (HAADF-STEM) mapping showed a variation in image contrast in samples irradiated to a fluence of 1 × 1015 ions/cm2. As predicted by Stopping Range and Ions in Materials (SRIM) calculations, the implanted region with the highest damage density appeared to have a bright contrast in HAADF-STEM which represented the high density c-BN symmetry. High Resolution Transmission Electron Microscopy (HRTEM) and electron diffraction measurements showed regions with nc-BN for samples implanted with low fluences and amorphous BN after implantation with high fluences indicating a fluence-related phase transition in BN. Raman spectroscopy showed the emergence of longitudinal optical frequency mode associated with c-BN after implantation.",
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Cross-sectional transmission electron microscopy studies of boron ion implantation in hexagonal boron nitride : English. / Aradi, Emily; Naidoo, S. R.; Cummings, F; Motochi, I.; Derry, Trevor E.

In: Diamond and Related Materials, Vol. 92, 02.2019, p. 168-173.

Research output: Contribution to journalArticle

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AU - Naidoo, S. R.

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