Damage accumulation in neon implanted silicon

E. Oliviero, S. Peripolli, L. Amaral, P. F.P. Fichtner, M. F. Beaufort, J. F. Barbot, S. E. Donnelly

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Damage accumulation in neon-implanted silicon with fluences ranging from 5×1012 to 5 × 1016 Ne cm-2 has been studied in detail. As-implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channeling conditions and by transmission electron microscopy in order to quantify and characterize the lattice damage. Wavelength dispersive spectrometry was used to obtain the relative neon content stored in the matrix. Implantation at room temperature leads to the amorphization of the silicon while a high density of nanosized bubbles is observed all along the ion distribution, forming a uniform and continuous layer for implantation temperatures higher than 250 °C. Clusters of interstitial defects are also present in the deeper part of the layer corresponding to the end of range of ions. After annealing, the samples implanted at temperatures below 250 °C present a polycrystalline structure with blisters at the surface while in the other samples coarsening of bubbles occurs and nanocavities are formed together with extended defects identified as {311} defects. The results are discussed in comparison to the case of helium-implanted silicon and in the light of radiation-enhanced diffusion.

LanguageEnglish
Article number043505
JournalJournal of Applied Physics
Volume100
Issue number4
Early online date18 Aug 2006
DOIs
Publication statusPublished - 11 Sep 2006
Externally publishedYes

Fingerprint

neon
damage
implantation
defects
silicon
bubbles
blisters
ion distribution
spectroscopy
backscattering
fluence
interstitials
helium
transmission electron microscopy
annealing
room temperature
radiation
matrices
wavelengths
ions

Cite this

Oliviero, E., Peripolli, S., Amaral, L., Fichtner, P. F. P., Beaufort, M. F., Barbot, J. F., & Donnelly, S. E. (2006). Damage accumulation in neon implanted silicon. Journal of Applied Physics, 100(4), [043505]. https://doi.org/10.1063/1.2220644
Oliviero, E. ; Peripolli, S. ; Amaral, L. ; Fichtner, P. F.P. ; Beaufort, M. F. ; Barbot, J. F. ; Donnelly, S. E. / Damage accumulation in neon implanted silicon. In: Journal of Applied Physics. 2006 ; Vol. 100, No. 4.
@article{113bfa5959c3439a9eded149beb21dcf,
title = "Damage accumulation in neon implanted silicon",
abstract = "Damage accumulation in neon-implanted silicon with fluences ranging from 5×1012 to 5 × 1016 Ne cm-2 has been studied in detail. As-implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channeling conditions and by transmission electron microscopy in order to quantify and characterize the lattice damage. Wavelength dispersive spectrometry was used to obtain the relative neon content stored in the matrix. Implantation at room temperature leads to the amorphization of the silicon while a high density of nanosized bubbles is observed all along the ion distribution, forming a uniform and continuous layer for implantation temperatures higher than 250 °C. Clusters of interstitial defects are also present in the deeper part of the layer corresponding to the end of range of ions. After annealing, the samples implanted at temperatures below 250 °C present a polycrystalline structure with blisters at the surface while in the other samples coarsening of bubbles occurs and nanocavities are formed together with extended defects identified as {311} defects. The results are discussed in comparison to the case of helium-implanted silicon and in the light of radiation-enhanced diffusion.",
author = "E. Oliviero and S. Peripolli and L. Amaral and Fichtner, {P. F.P.} and Beaufort, {M. F.} and Barbot, {J. F.} and Donnelly, {S. E.}",
year = "2006",
month = "9",
day = "11",
doi = "10.1063/1.2220644",
language = "English",
volume = "100",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "4",

}

Oliviero, E, Peripolli, S, Amaral, L, Fichtner, PFP, Beaufort, MF, Barbot, JF & Donnelly, SE 2006, 'Damage accumulation in neon implanted silicon', Journal of Applied Physics, vol. 100, no. 4, 043505. https://doi.org/10.1063/1.2220644

Damage accumulation in neon implanted silicon. / Oliviero, E.; Peripolli, S.; Amaral, L.; Fichtner, P. F.P.; Beaufort, M. F.; Barbot, J. F.; Donnelly, S. E.

In: Journal of Applied Physics, Vol. 100, No. 4, 043505, 11.09.2006.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Damage accumulation in neon implanted silicon

AU - Oliviero, E.

AU - Peripolli, S.

AU - Amaral, L.

AU - Fichtner, P. F.P.

AU - Beaufort, M. F.

AU - Barbot, J. F.

AU - Donnelly, S. E.

PY - 2006/9/11

Y1 - 2006/9/11

N2 - Damage accumulation in neon-implanted silicon with fluences ranging from 5×1012 to 5 × 1016 Ne cm-2 has been studied in detail. As-implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channeling conditions and by transmission electron microscopy in order to quantify and characterize the lattice damage. Wavelength dispersive spectrometry was used to obtain the relative neon content stored in the matrix. Implantation at room temperature leads to the amorphization of the silicon while a high density of nanosized bubbles is observed all along the ion distribution, forming a uniform and continuous layer for implantation temperatures higher than 250 °C. Clusters of interstitial defects are also present in the deeper part of the layer corresponding to the end of range of ions. After annealing, the samples implanted at temperatures below 250 °C present a polycrystalline structure with blisters at the surface while in the other samples coarsening of bubbles occurs and nanocavities are formed together with extended defects identified as {311} defects. The results are discussed in comparison to the case of helium-implanted silicon and in the light of radiation-enhanced diffusion.

AB - Damage accumulation in neon-implanted silicon with fluences ranging from 5×1012 to 5 × 1016 Ne cm-2 has been studied in detail. As-implanted and annealed samples were investigated by Rutherford backscattering spectrometry under channeling conditions and by transmission electron microscopy in order to quantify and characterize the lattice damage. Wavelength dispersive spectrometry was used to obtain the relative neon content stored in the matrix. Implantation at room temperature leads to the amorphization of the silicon while a high density of nanosized bubbles is observed all along the ion distribution, forming a uniform and continuous layer for implantation temperatures higher than 250 °C. Clusters of interstitial defects are also present in the deeper part of the layer corresponding to the end of range of ions. After annealing, the samples implanted at temperatures below 250 °C present a polycrystalline structure with blisters at the surface while in the other samples coarsening of bubbles occurs and nanocavities are formed together with extended defects identified as {311} defects. The results are discussed in comparison to the case of helium-implanted silicon and in the light of radiation-enhanced diffusion.

UR - http://www.scopus.com/inward/record.url?scp=33748303130&partnerID=8YFLogxK

U2 - 10.1063/1.2220644

DO - 10.1063/1.2220644

M3 - Article

VL - 100

JO - Journal of Applied Physics

T2 - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 4

M1 - 043505

ER -

Oliviero E, Peripolli S, Amaral L, Fichtner PFP, Beaufort MF, Barbot JF et al. Damage accumulation in neon implanted silicon. Journal of Applied Physics. 2006 Sep 11;100(4). 043505. https://doi.org/10.1063/1.2220644