Damage and Dopant Profiles Produced by Ultra-Shallow Boron and Arsenic Ion Implants into Silicon at Different Temperatures Characterised by Medium Energy Ion Scattering

J. A. Van den Berg, D. G. Armour, S. Zhang, S. Whelan, M. Werner, E. H.J. Collart, R. D. Goldberg, P. Bailey, T. C.Q. Noakes

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)

Fingerprint

Dive into the research topics of 'Damage and Dopant Profiles Produced by Ultra-Shallow Boron and Arsenic Ion Implants into Silicon at Different Temperatures Characterised by Medium Energy Ion Scattering'. Together they form a unique fingerprint.

Chemical Compounds

Physics & Astronomy

Engineering & Materials Science