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Damage and Dopant Profiles Produced by Ultra-Shallow Boron and Arsenic Ion Implants into Silicon at Different Temperatures Characterised by Medium Energy Ion Scattering

J. A. Van den Berg, D. G. Armour, S. Zhang, S. Whelan, M. Werner, E. H.J. Collart, R. D. Goldberg, P. Bailey, T. C.Q. Noakes

Research output: Contribution to journal › Conference article › peer-review

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Material Science