Damage microstructure evolution of helium ion irradiated SiC under fusion relevant temperatures

R.W. Harrison, S. Ebert, J.A. Hinks, S.E. Donnelly

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In-situ transmission electron microscopy (TEM) with ion irradiation has been used to study the damage microstructure evolution of He ion irradiated 4-H SiC at nuclear fusion relevant temperatures. The SiC samples were irradiated with 20 keV He ions at 25, 400, 800 and 1200 °C to a dose of 5.0 displacements per atom (DPA). At 25 °C, the material fully amorphises at 1.5 DPA and no He bubble nucleation occurs up to the doses studied. At 400 and 800 °C, He bubble nucleation occurs and the material remains crystalline. Bubble nucleation occurs at 2.0 DPA at 400 °C but occurs at only 0.5 DPA at 1200 °C. This is attributed the He atoms de-trapping from vacancies and migrating interstitially to larger He-vacancy clusters at higher temperatures, leading to faster nucleation of observable He bubbles. Helium platelets form at an irradiation temperature of 1200 °C at 0.5 DPA showing a preference for nucleation between the {0001} basal planes.
LanguageEnglish
Pages3718-3726
Number of pages9
JournalJournal of the European Ceramic Society
Volume38
Issue number11
Early online date30 Apr 2018
DOIs
Publication statusPublished - 1 Sep 2018

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Helium
Fusion reactions
Ions
Nucleation
Atoms
Microstructure
Temperature
Vacancies
Ion bombardment
Platelets
Irradiation
Crystalline materials
Transmission electron microscopy

Cite this

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title = "Damage microstructure evolution of helium ion irradiated SiC under fusion relevant temperatures",
abstract = "In-situ transmission electron microscopy (TEM) with ion irradiation has been used to study the damage microstructure evolution of He ion irradiated 4-H SiC at nuclear fusion relevant temperatures. The SiC samples were irradiated with 20 keV He ions at 25, 400, 800 and 1200 °C to a dose of 5.0 displacements per atom (DPA). At 25 °C, the material fully amorphises at 1.5 DPA and no He bubble nucleation occurs up to the doses studied. At 400 and 800 °C, He bubble nucleation occurs and the material remains crystalline. Bubble nucleation occurs at 2.0 DPA at 400 °C but occurs at only 0.5 DPA at 1200 °C. This is attributed the He atoms de-trapping from vacancies and migrating interstitially to larger He-vacancy clusters at higher temperatures, leading to faster nucleation of observable He bubbles. Helium platelets form at an irradiation temperature of 1200 °C at 0.5 DPA showing a preference for nucleation between the {0001} basal planes.",
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Damage microstructure evolution of helium ion irradiated SiC under fusion relevant temperatures. / Harrison, R.W.; Ebert, S.; Hinks, J.A.; Donnelly, S.E.

In: Journal of the European Ceramic Society, Vol. 38, No. 11, 01.09.2018, p. 3718-3726.

Research output: Contribution to journalArticle

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AU - Hinks, J.A.

AU - Donnelly, S.E.

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N2 - In-situ transmission electron microscopy (TEM) with ion irradiation has been used to study the damage microstructure evolution of He ion irradiated 4-H SiC at nuclear fusion relevant temperatures. The SiC samples were irradiated with 20 keV He ions at 25, 400, 800 and 1200 °C to a dose of 5.0 displacements per atom (DPA). At 25 °C, the material fully amorphises at 1.5 DPA and no He bubble nucleation occurs up to the doses studied. At 400 and 800 °C, He bubble nucleation occurs and the material remains crystalline. Bubble nucleation occurs at 2.0 DPA at 400 °C but occurs at only 0.5 DPA at 1200 °C. This is attributed the He atoms de-trapping from vacancies and migrating interstitially to larger He-vacancy clusters at higher temperatures, leading to faster nucleation of observable He bubbles. Helium platelets form at an irradiation temperature of 1200 °C at 0.5 DPA showing a preference for nucleation between the {0001} basal planes.

AB - In-situ transmission electron microscopy (TEM) with ion irradiation has been used to study the damage microstructure evolution of He ion irradiated 4-H SiC at nuclear fusion relevant temperatures. The SiC samples were irradiated with 20 keV He ions at 25, 400, 800 and 1200 °C to a dose of 5.0 displacements per atom (DPA). At 25 °C, the material fully amorphises at 1.5 DPA and no He bubble nucleation occurs up to the doses studied. At 400 and 800 °C, He bubble nucleation occurs and the material remains crystalline. Bubble nucleation occurs at 2.0 DPA at 400 °C but occurs at only 0.5 DPA at 1200 °C. This is attributed the He atoms de-trapping from vacancies and migrating interstitially to larger He-vacancy clusters at higher temperatures, leading to faster nucleation of observable He bubbles. Helium platelets form at an irradiation temperature of 1200 °C at 0.5 DPA showing a preference for nucleation between the {0001} basal planes.

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