Damage profiles of ultrashallow B implants in SI and the Kinchin-Pease relationship

J. A. Van Den Berg, G. Carter, D. G. Armour, M. Werner, R. D. Goldberg, E. J.H. Collart, P. Bailey, T. C.Q. Noakes

Research output: Contribution to journalArticle

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Abstract

Damage distributions resulting from 0.1-2 keV B+ implantation at room temperature into Si(100) to doses ranging from 1 × 1014 to 2 × 1016 cm-2 have been determined using high-depth-resolution medium-energy-ion scattering in the double alignment mode. For all B+ doses and energies investigated a 3-4 nm deep, near-surface damage peak was observed while for energies at and above 1 keV, a second damage peak developed beyond the mean projected B+ ion range of 5.3 nm. This dual damage peak structure is due to dynamic annealing processes. For the near-surface peak it is observed that, at the lowest implant energies and doses used, for which recombination processes are suppressed due to the proximity of the surface capturing interstitials, the value of the damage production yield for low-mass B+ ions is equal or greater than the modified Kinchin-Pease model predictions [G. H. Kinchin and R. S. Pease, Rep. Prog. Phys. 18, 1 (1955); G. H. Kinchin and R. S. Pease, J. Nucl. Energy 1, 200 (1955); P. Sigmund, Appl. Phys. Lett. 14, 114 (1969)].

Original languageEnglish
Pages (from-to)3074-3076
Number of pages3
JournalApplied Physics Letters
Volume85
Issue number15
DOIs
Publication statusPublished - 11 Oct 2004
Externally publishedYes

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International System of Units
damage
profiles
dosage
energy
ion scattering
proximity
implantation
interstitials
ions
alignment
annealing
room temperature
predictions

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Van Den Berg, J. A., Carter, G., Armour, D. G., Werner, M., Goldberg, R. D., Collart, E. J. H., ... Noakes, T. C. Q. (2004). Damage profiles of ultrashallow B implants in SI and the Kinchin-Pease relationship. Applied Physics Letters, 85(15), 3074-3076. https://doi.org/10.1063/1.1801671
Van Den Berg, J. A. ; Carter, G. ; Armour, D. G. ; Werner, M. ; Goldberg, R. D. ; Collart, E. J.H. ; Bailey, P. ; Noakes, T. C.Q. / Damage profiles of ultrashallow B implants in SI and the Kinchin-Pease relationship. In: Applied Physics Letters. 2004 ; Vol. 85, No. 15. pp. 3074-3076.
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Van Den Berg, JA, Carter, G, Armour, DG, Werner, M, Goldberg, RD, Collart, EJH, Bailey, P & Noakes, TCQ 2004, 'Damage profiles of ultrashallow B implants in SI and the Kinchin-Pease relationship', Applied Physics Letters, vol. 85, no. 15, pp. 3074-3076. https://doi.org/10.1063/1.1801671

Damage profiles of ultrashallow B implants in SI and the Kinchin-Pease relationship. / Van Den Berg, J. A.; Carter, G.; Armour, D. G.; Werner, M.; Goldberg, R. D.; Collart, E. J.H.; Bailey, P.; Noakes, T. C.Q.

In: Applied Physics Letters, Vol. 85, No. 15, 11.10.2004, p. 3074-3076.

Research output: Contribution to journalArticle

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AU - Carter, G.

AU - Armour, D. G.

AU - Werner, M.

AU - Goldberg, R. D.

AU - Collart, E. J.H.

AU - Bailey, P.

AU - Noakes, T. C.Q.

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