Delta-doped GaAs/AlAs multiple quantum wells: Study by optical and terahertz techniques

Bronislovas Čechavičius, Julius Kavaliauskas, Gene Krivaite, Dalius Seliuta, Gintaras Valušis, Ben Sherliker, Matthew Halsall, Paul Harrison, Suraj Khanna, Edmund Linfield

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


Photoreflectance (PR) and differential surface photovoltage (DSPV) spectroscopies were employed to characterize optically Be and Si δ-doped GaAs/AlAs multiple quantum wells. The surface electric field strength was estimated from the Franz-Keldysh oscillations clearly visible in PR spectra. Line shape analysis of DSPV spectra allowed one to estimate interband excitonic transition energies and broadening parameters for a large number of QW-related subbands; reasonable agreement was found between experimental and calculated transition energies. The interface quality and the main factors responsible for exciton line broadening were evaluated from spectroscopic data. These MQW structures were also studied as selective THz sensors by spectral photocurrent measurements at low temperatures.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
EditorsWolfgang Jantsch, Friedrich Schaffler
PublisherAIP Publishing
Number of pages2
ISBN (Print)9780735403970
Publication statusPublished - 10 Apr 2007
Externally publishedYes
Event28th International Conference on the Physics of Semiconductors - Vienna, Austria
Duration: 24 Jul 200628 Jul 2006
Conference number: 28

Publication series

NameAIP Conference Proceedings
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616


Conference28th International Conference on the Physics of Semiconductors
Abbreviated titleICPS 2006


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