Delta-doped GaAs/AlAs multiple quantum wells: Study by optical and terahertz techniques

Bronislovas Čechavičius; Julius Kavaliauskas; Gene Krivaite; Dalius Seliuta; Gintaras Valušis; Ben Sherliker; Matthew Halsall; Paul Harrison; Suraj Khanna; Edmund Linfield

doi:10.1063/1.2729948

Delta-doped GaAs/AlAs multiple quantum wells: Study by optical and terahertz techniques

Bronislovas Čechavičius, Julius Kavaliauskas, Gene Krivaite, Dalius Seliuta, Gintaras Valušis, Ben Sherliker, Matthew Halsall, Paul Harrison, Suraj Khanna, Edmund Linfield

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Photoreflectance (PR) and differential surface photovoltage (DSPV) spectroscopies were employed to characterize optically Be and Si δ-doped GaAs/AlAs multiple quantum wells. The surface electric field strength was estimated from the Franz-Keldysh oscillations clearly visible in PR spectra. Line shape analysis of DSPV spectra allowed one to estimate interband excitonic transition energies and broadening parameters for a large number of QW-related subbands; reasonable agreement was found between experimental and calculated transition energies. The interface quality and the main factors responsible for exciton line broadening were evaluated from spectroscopic data. These MQW structures were also studied as selective THz sensors by spectral photocurrent measurements at low temperatures.

Original language	English
Title of host publication	Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B
Editors	Wolfgang Jantsch, Friedrich Schaffler
Publisher	AIP Publishing
Pages	427-428
Number of pages	2
Volume	893
ISBN (Print)	9780735403970
DOIs	https://doi.org/10.1063/1.2729948
Publication status	Published - 10 Apr 2007
Externally published	Yes
Event	28th International Conference on the Physics of Semiconductors - Vienna, Austria Duration: 24 Jul 2006 → 28 Jul 2006 Conference number: 28

Publication series

Name	AIP Conference Proceedings
Volume	893
ISSN (Print)	0094-243X
ISSN (Electronic)	1551-7616

Conference

Conference	28th International Conference on the Physics of Semiconductors
Abbreviated title	ICPS 2006
Country/Territory	Austria
City	Vienna
Period	24/07/06 → 28/07/06

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Čechavičius, B., Kavaliauskas, J., Krivaite, G., Seliuta, D., Valušis, G., Sherliker, B., Halsall, M., Harrison, P., Khanna, S., & Linfield, E. (2007). Delta-doped GaAs/AlAs multiple quantum wells: Study by optical and terahertz techniques. In W. Jantsch, & F. Schaffler (Eds.), Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B (Vol. 893, pp. 427-428). (AIP Conference Proceedings; Vol. 893). AIP Publishing. https://doi.org/10.1063/1.2729948

Čechavičius, Bronislovas ; Kavaliauskas, Julius ; Krivaite, Gene et al. / Delta-doped GaAs/AlAs multiple quantum wells : Study by optical and terahertz techniques. Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. editor / Wolfgang Jantsch ; Friedrich Schaffler. Vol. 893 AIP Publishing, 2007. pp. 427-428 (AIP Conference Proceedings).

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title = "Delta-doped GaAs/AlAs multiple quantum wells: Study by optical and terahertz techniques",

abstract = "Photoreflectance (PR) and differential surface photovoltage (DSPV) spectroscopies were employed to characterize optically Be and Si δ-doped GaAs/AlAs multiple quantum wells. The surface electric field strength was estimated from the Franz-Keldysh oscillations clearly visible in PR spectra. Line shape analysis of DSPV spectra allowed one to estimate interband excitonic transition energies and broadening parameters for a large number of QW-related subbands; reasonable agreement was found between experimental and calculated transition energies. The interface quality and the main factors responsible for exciton line broadening were evaluated from spectroscopic data. These MQW structures were also studied as selective THz sensors by spectral photocurrent measurements at low temperatures.",

keywords = "Semiconductor Quantum Wells, Terahertz, Silicon",

author = "Bronislovas {\v C}echavi{\v c}ius and Julius Kavaliauskas and Gene Krivaite and Dalius Seliuta and Gintaras Valu{\v s}is and Ben Sherliker and Matthew Halsall and Paul Harrison and Suraj Khanna and Edmund Linfield",

year = "2007",

month = apr,

day = "10",

doi = "10.1063/1.2729948",

language = "English",

isbn = "9780735403970",

volume = "893",

series = "AIP Conference Proceedings",

publisher = "AIP Publishing",

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booktitle = "Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B",

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note = "28th International Conference on the Physics of Semiconductors, ICPS 2006 ; Conference date: 24-07-2006 Through 28-07-2006",

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Čechavičius, B, Kavaliauskas, J, Krivaite, G, Seliuta, D, Valušis, G, Sherliker, B, Halsall, M, Harrison, P, Khanna, S & Linfield, E 2007, Delta-doped GaAs/AlAs multiple quantum wells: Study by optical and terahertz techniques. in W Jantsch & F Schaffler (eds), Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. vol. 893, AIP Conference Proceedings, vol. 893, AIP Publishing, pp. 427-428, 28th International Conference on the Physics of Semiconductors, Vienna, Austria, 24/07/06. https://doi.org/10.1063/1.2729948

Delta-doped GaAs/AlAs multiple quantum wells : Study by optical and terahertz techniques. / Čechavičius, Bronislovas; Kavaliauskas, Julius; Krivaite, Gene et al.

Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. ed. / Wolfgang Jantsch; Friedrich Schaffler. Vol. 893 AIP Publishing, 2007. p. 427-428 (AIP Conference Proceedings; Vol. 893).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Delta-doped GaAs/AlAs multiple quantum wells

T2 - 28th International Conference on the Physics of Semiconductors

AU - Čechavičius, Bronislovas

AU - Kavaliauskas, Julius

AU - Krivaite, Gene

AU - Seliuta, Dalius

AU - Valušis, Gintaras

AU - Sherliker, Ben

AU - Halsall, Matthew

AU - Harrison, Paul

AU - Khanna, Suraj

AU - Linfield, Edmund

N1 - Conference code: 28

PY - 2007/4/10

Y1 - 2007/4/10

N2 - Photoreflectance (PR) and differential surface photovoltage (DSPV) spectroscopies were employed to characterize optically Be and Si δ-doped GaAs/AlAs multiple quantum wells. The surface electric field strength was estimated from the Franz-Keldysh oscillations clearly visible in PR spectra. Line shape analysis of DSPV spectra allowed one to estimate interband excitonic transition energies and broadening parameters for a large number of QW-related subbands; reasonable agreement was found between experimental and calculated transition energies. The interface quality and the main factors responsible for exciton line broadening were evaluated from spectroscopic data. These MQW structures were also studied as selective THz sensors by spectral photocurrent measurements at low temperatures.

AB - Photoreflectance (PR) and differential surface photovoltage (DSPV) spectroscopies were employed to characterize optically Be and Si δ-doped GaAs/AlAs multiple quantum wells. The surface electric field strength was estimated from the Franz-Keldysh oscillations clearly visible in PR spectra. Line shape analysis of DSPV spectra allowed one to estimate interband excitonic transition energies and broadening parameters for a large number of QW-related subbands; reasonable agreement was found between experimental and calculated transition energies. The interface quality and the main factors responsible for exciton line broadening were evaluated from spectroscopic data. These MQW structures were also studied as selective THz sensors by spectral photocurrent measurements at low temperatures.

KW - Semiconductor Quantum Wells

KW - Terahertz

KW - Silicon

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SN - 9780735403970

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SP - 427

EP - 428

BT - Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B

A2 - Jantsch, Wolfgang

A2 - Schaffler, Friedrich

PB - AIP Publishing

Y2 - 24 July 2006 through 28 July 2006

ER -

Čechavičius B, Kavaliauskas J, Krivaite G, Seliuta D, Valušis G, Sherliker B et al. Delta-doped GaAs/AlAs multiple quantum wells: Study by optical and terahertz techniques. In Jantsch W, Schaffler F, editors, Physics of Semiconductors - 28th International Conference on the Physics of Semiconductors, ICPS 2006, Part A and B. Vol. 893. AIP Publishing. 2007. p. 427-428. (AIP Conference Proceedings). doi: 10.1063/1.2729948

Delta-doped GaAs/AlAs multiple quantum wells: Study by optical and terahertz techniques

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