Abstract
Nitrogen is an important impurity in Czochralski grown silicon (Cz–Si) as it enhances oxygen precipitation through the formation of vacancy–nitrogen–oxygen clusters and in particular the VmN2On complexes. Here, we employ density functional theory (DFT) to predict the structure of VmN2On (m,n=1, 2). We report that the lowest energy VmN2On(m,n=1, 2) defects are very strongly bound. These results are consistent, and support the previously reported theoretical and experimental conclusions that VmN2On structures could form.
| Original language | English |
|---|---|
| Article number | 2350035 |
| Journal | Modern Physics Letters B |
| Volume | 37 |
| Issue number | 14 |
| Early online date | 11 Apr 2023 |
| DOIs | |
| Publication status | Published - 20 May 2023 |
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