Depth profile characterization of ultra shallow junction implants

Philipp Hönicke, Burkhard Beckhoff, Michael Kolbe, Damiano Giubertoni, J. Van Den Berg, Giancarlo Pepponi

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

A need for analysis techniques, complementary to secondary ion mass spectrometry (SIMS), for depth profiling dopants in silicon for ultra shallow junction (USJ) applications in CMOS technologies has recently emerged following the difficulties SIMS is facing there. Grazing incidence X-ray fluorescence (GIXRF) analysis in the soft X-ray range is a high-potential tool for this purpose. It provides excellent conditions for the excitation of the B-K and the As-Liii,iishells. The X-ray standing wave (XSW) field associated with GIXRF on flat samples is used here as a tunable sensor to obtain information about the implantation profile because the in-depth changes of the XSW intensity are dependent on the angle of incidence. This technique is very sensitive to near-surface layers and is therefore well suited for the analysis of USJ distributions. Si wafers implanted with either arsenic or boron at different fluences and implantation energies were used to compare SIMS with synchrotron radiation-induced GIXRF analysis. GIXRF measurements were carried out at the laboratory of the Physikalisch-Technische Bundesanstalt (PTB) at the electron storage ring BESSY II using monochromatized undulator radiation of well-known radiant power and spectral purity. The use of an absolutely calibrated energy-dispersive detector for the acquisition of the B-Kα and As-Lα fluorescence radiation enabled the absolute determination of the total retained dose. The concentration profile was obtained by ab initio calculation and comparison with the angular measurements of the X-ray fluorescence.
Original languageEnglish
Pages (from-to)2825-2832
Number of pages8
JournalAnalytical and Bioanalytical Chemistry
Volume396
Issue number8
Early online date26 Nov 2009
DOIs
Publication statusPublished - Apr 2010
Externally publishedYes

Fingerprint

X-Rays
X rays
Fluorescence
Secondary Ion Mass Spectrometry
Secondary ion mass spectrometry
Incidence
Radiation
Wigglers
Synchrotrons
Boron
Depth profiling
Storage rings
Arsenic
Silicon
Angle measurement
Synchrotron radiation
Doping (additives)
Electrons
Technology
Detectors

Cite this

Hönicke, Philipp ; Beckhoff, Burkhard ; Kolbe, Michael ; Giubertoni, Damiano ; Van Den Berg, J. ; Pepponi, Giancarlo. / Depth profile characterization of ultra shallow junction implants. In: Analytical and Bioanalytical Chemistry. 2010 ; Vol. 396, No. 8. pp. 2825-2832.
@article{4bab94faf9934a52a4d7144b2cd9da8b,
title = "Depth profile characterization of ultra shallow junction implants",
abstract = "A need for analysis techniques, complementary to secondary ion mass spectrometry (SIMS), for depth profiling dopants in silicon for ultra shallow junction (USJ) applications in CMOS technologies has recently emerged following the difficulties SIMS is facing there. Grazing incidence X-ray fluorescence (GIXRF) analysis in the soft X-ray range is a high-potential tool for this purpose. It provides excellent conditions for the excitation of the B-K and the As-Liii,iishells. The X-ray standing wave (XSW) field associated with GIXRF on flat samples is used here as a tunable sensor to obtain information about the implantation profile because the in-depth changes of the XSW intensity are dependent on the angle of incidence. This technique is very sensitive to near-surface layers and is therefore well suited for the analysis of USJ distributions. Si wafers implanted with either arsenic or boron at different fluences and implantation energies were used to compare SIMS with synchrotron radiation-induced GIXRF analysis. GIXRF measurements were carried out at the laboratory of the Physikalisch-Technische Bundesanstalt (PTB) at the electron storage ring BESSY II using monochromatized undulator radiation of well-known radiant power and spectral purity. The use of an absolutely calibrated energy-dispersive detector for the acquisition of the B-Kα and As-Lα fluorescence radiation enabled the absolute determination of the total retained dose. The concentration profile was obtained by ab initio calculation and comparison with the angular measurements of the X-ray fluorescence.",
keywords = "Elemental depth profile, Grazing incidence X-ray fluorescence analysis, Ultra shallow junctions",
author = "Philipp H{\"o}nicke and Burkhard Beckhoff and Michael Kolbe and Damiano Giubertoni and {Van Den Berg}, J. and Giancarlo Pepponi",
year = "2010",
month = "4",
doi = "10.1007/s00216-009-3266-y",
language = "English",
volume = "396",
pages = "2825--2832",
journal = "Fresenius Zeitschrift fur Analytische Chemie",
issn = "0016-1152",
publisher = "Springer Verlag",
number = "8",

}

Depth profile characterization of ultra shallow junction implants. / Hönicke, Philipp; Beckhoff, Burkhard; Kolbe, Michael; Giubertoni, Damiano; Van Den Berg, J.; Pepponi, Giancarlo.

In: Analytical and Bioanalytical Chemistry, Vol. 396, No. 8, 04.2010, p. 2825-2832.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Depth profile characterization of ultra shallow junction implants

AU - Hönicke, Philipp

AU - Beckhoff, Burkhard

AU - Kolbe, Michael

AU - Giubertoni, Damiano

AU - Van Den Berg, J.

AU - Pepponi, Giancarlo

PY - 2010/4

Y1 - 2010/4

N2 - A need for analysis techniques, complementary to secondary ion mass spectrometry (SIMS), for depth profiling dopants in silicon for ultra shallow junction (USJ) applications in CMOS technologies has recently emerged following the difficulties SIMS is facing there. Grazing incidence X-ray fluorescence (GIXRF) analysis in the soft X-ray range is a high-potential tool for this purpose. It provides excellent conditions for the excitation of the B-K and the As-Liii,iishells. The X-ray standing wave (XSW) field associated with GIXRF on flat samples is used here as a tunable sensor to obtain information about the implantation profile because the in-depth changes of the XSW intensity are dependent on the angle of incidence. This technique is very sensitive to near-surface layers and is therefore well suited for the analysis of USJ distributions. Si wafers implanted with either arsenic or boron at different fluences and implantation energies were used to compare SIMS with synchrotron radiation-induced GIXRF analysis. GIXRF measurements were carried out at the laboratory of the Physikalisch-Technische Bundesanstalt (PTB) at the electron storage ring BESSY II using monochromatized undulator radiation of well-known radiant power and spectral purity. The use of an absolutely calibrated energy-dispersive detector for the acquisition of the B-Kα and As-Lα fluorescence radiation enabled the absolute determination of the total retained dose. The concentration profile was obtained by ab initio calculation and comparison with the angular measurements of the X-ray fluorescence.

AB - A need for analysis techniques, complementary to secondary ion mass spectrometry (SIMS), for depth profiling dopants in silicon for ultra shallow junction (USJ) applications in CMOS technologies has recently emerged following the difficulties SIMS is facing there. Grazing incidence X-ray fluorescence (GIXRF) analysis in the soft X-ray range is a high-potential tool for this purpose. It provides excellent conditions for the excitation of the B-K and the As-Liii,iishells. The X-ray standing wave (XSW) field associated with GIXRF on flat samples is used here as a tunable sensor to obtain information about the implantation profile because the in-depth changes of the XSW intensity are dependent on the angle of incidence. This technique is very sensitive to near-surface layers and is therefore well suited for the analysis of USJ distributions. Si wafers implanted with either arsenic or boron at different fluences and implantation energies were used to compare SIMS with synchrotron radiation-induced GIXRF analysis. GIXRF measurements were carried out at the laboratory of the Physikalisch-Technische Bundesanstalt (PTB) at the electron storage ring BESSY II using monochromatized undulator radiation of well-known radiant power and spectral purity. The use of an absolutely calibrated energy-dispersive detector for the acquisition of the B-Kα and As-Lα fluorescence radiation enabled the absolute determination of the total retained dose. The concentration profile was obtained by ab initio calculation and comparison with the angular measurements of the X-ray fluorescence.

KW - Elemental depth profile

KW - Grazing incidence X-ray fluorescence analysis

KW - Ultra shallow junctions

UR - http://www.scopus.com/inward/record.url?scp=77951298195&partnerID=8YFLogxK

U2 - 10.1007/s00216-009-3266-y

DO - 10.1007/s00216-009-3266-y

M3 - Article

VL - 396

SP - 2825

EP - 2832

JO - Fresenius Zeitschrift fur Analytische Chemie

JF - Fresenius Zeitschrift fur Analytische Chemie

SN - 0016-1152

IS - 8

ER -