Design and simulation of InGaAs/AlAsSb quantum-cascade lasers for short wavelength emission

C. A. Evans, V. D. Jovanović, D. Indjin, Z. Ikonić, P. Harrison

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)

Abstract

The design and simulation of an In0.53 Ga0.47 As Al0.56 As0.44 Sb quantum-cascade laser emitting in the near infrared is presented. Designed using a self-consistent rate equation solver coupled with an energy balance rate equation, the proposed laser has a calculated population inversion of ∼20% at 77 K and sufficient gain to achieve room-temperature laser emission at λ∼2.8 μm. Threshold currents in the range 4-8 kA cm2 are estimated as the temperature increases from 77 K to 300 K. The output characteristics of the proposed laser are compared to an existing λ∼3.1 μm In0.53 Ga0.47 As Al0.56 As0.44 Sb quantum-cascade structure presented in the literature.

Original languageEnglish
Article number141109
Number of pages3
JournalApplied Physics Letters
Volume87
Issue number14
DOIs
Publication statusPublished - 3 Oct 2005
Externally publishedYes

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