Design considerations for GaN/AlN based unipolar (opto-)electronic devices, and interface quality aspects

A. Grier; A. Valavanis; C. Edmunds; J. Shao; J. D. Cooper; G. Gardner; M. J. Mantra; O. Malis; D. Indjin; Z. Ikonić; P. Harrison

doi:10.1109/PHOSST.2016.7548743

Design considerations for GaN/AlN based unipolar (opto-)electronic devices, and interface quality aspects

A. Grier, A. Valavanis, C. Edmunds, J. Shao, J. D. Cooper, G. Gardner, M. J. Mantra, O. Malis, D. Indjin, Z. Ikonić, P. Harrison

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Citation (Scopus)

Abstract

We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.

Original language	English
Title of host publication	2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	90-91
Number of pages	2
ISBN (Electronic)	9781509019007
ISBN (Print)	9781509019014, 9781467390873
DOIs	https://doi.org/10.1109/PHOSST.2016.7548743
Publication status	Published - 25 Aug 2016
Externally published	Yes
Event	2016 IEEE Photonics Society Summer Topical Meeting Series - Newport Beach, United States Duration: 11 Jul 2016 → 13 Jul 2016

Conference

Conference	2016 IEEE Photonics Society Summer Topical Meeting Series
Abbreviated title	SUM 2016
Country/Territory	United States
City	Newport Beach
Period	11/07/16 → 13/07/16

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Grier, A., Valavanis, A., Edmunds, C., Shao, J., Cooper, J. D., Gardner, G., Mantra, M. J., Malis, O., Indjin, D., Ikonić, Z., & Harrison, P. (2016). Design considerations for GaN/AlN based unipolar (opto-)electronic devices, and interface quality aspects. In 2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016 (pp. 90-91). [7548743] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PHOSST.2016.7548743

@inproceedings{4dc0522a42ab43a3a937c5d4c9ae594c,

title = "Design considerations for GaN/AlN based unipolar (opto-)electronic devices, and interface quality aspects",

abstract = "We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.",

keywords = "Quantum cascade lasers, Optoelectronic devices, Aluminum gallium nitride, Wide band gap semiconductors, Resonant tunneling devices, Performance evaluation",

author = "A. Grier and A. Valavanis and C. Edmunds and J. Shao and Cooper, {J. D.} and G. Gardner and Mantra, {M. J.} and O. Malis and D. Indjin and Z. Ikoni{\'c} and P. Harrison",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016 ; Conference date: 11-07-2016 Through 13-07-2016",

year = "2016",

month = aug,

day = "25",

doi = "10.1109/PHOSST.2016.7548743",

language = "English",

isbn = "9781509019014",

pages = "90--91",

booktitle = "2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

}

Grier, A, Valavanis, A, Edmunds, C, Shao, J, Cooper, JD, Gardner, G, Mantra, MJ, Malis, O, Indjin, D, Ikonić, Z & Harrison, P 2016, Design considerations for GaN/AlN based unipolar (opto-)electronic devices, and interface quality aspects. in 2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016., 7548743, Institute of Electrical and Electronics Engineers Inc., pp. 90-91, 2016 IEEE Photonics Society Summer Topical Meeting Series, Newport Beach, California, United States, 11/07/16. https://doi.org/10.1109/PHOSST.2016.7548743

Design considerations for GaN/AlN based unipolar (opto-)electronic devices, and interface quality aspects. / Grier, A.; Valavanis, A.; Edmunds, C. et al.

2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016. Institute of Electrical and Electronics Engineers Inc., 2016. p. 90-91 7548743.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Design considerations for GaN/AlN based unipolar (opto-)electronic devices, and interface quality aspects

AU - Grier, A.

AU - Valavanis, A.

AU - Edmunds, C.

AU - Shao, J.

AU - Cooper, J. D.

AU - Gardner, G.

AU - Mantra, M. J.

AU - Malis, O.

AU - Indjin, D.

AU - Ikonić, Z.

AU - Harrison, P.

PY - 2016/8/25

Y1 - 2016/8/25

N2 - We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.

AB - We describe the theoretical and experimental studies of GaN/AlGaN based resonant tunnelling diodes, and in particular analyse the effects and typical values of interface roughness, and then discuss the implications of these, realistic material quality parameters on performance of unipolar optoelectronic devices.

KW - Quantum cascade lasers

KW - Optoelectronic devices

KW - Aluminum gallium nitride

KW - Wide band gap semiconductors

KW - Resonant tunneling devices

KW - Performance evaluation

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U2 - 10.1109/PHOSST.2016.7548743

DO - 10.1109/PHOSST.2016.7548743

M3 - Conference contribution

AN - SCOPUS:84988719696

SN - 9781509019014

SN - 9781467390873

SP - 90

EP - 91

BT - 2016 IEEE Photonics Society Summer Topical Meeting Series, SUM 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 IEEE Photonics Society Summer Topical Meeting Series

Y2 - 11 July 2016 through 13 July 2016

ER -

Design considerations for GaN/AlN based unipolar (opto-)electronic devices, and interface quality aspects

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