Abstract
Low ion energy is accepted as an essential requirement in achieving low damage when dry etching semiconductors. In order to investigate whether low energy is sufficient we have studied the effect of a real SiCl4 reactive ion etching system as well as the effect of bombardment of separate constituent ions from a SiCl4 discharge in an low energy implanter. We find that molecular ions contribute less to deep damage than do atomic ions. Thus low damage may be promoted by using reactive etch chemistries with low ion energies and small atomic to molecular ion fractions.
| Original language | English |
|---|---|
| Pages (from-to) | 299-302 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 46 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - May 1999 |
| Externally published | Yes |
| Event | International Conference on Micro- and Nano-Fabrication - Leuven, Belgium Duration: 22 Sep 1998 → 24 Sep 1998 |
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Design considerations for low damage process plasmas. / Rahman, M.; Deng, L. G.; Boyd, A.; Ribayrol, A.; Wilkinson, C. D.W.; Van Den Berg, J. A.; Armour, D. G.
In: Microelectronic Engineering, Vol. 46, No. 1-4, 05.1999, p. 299-302.Research output: Contribution to journal › Conference article
TY - JOUR
T1 - Design considerations for low damage process plasmas
AU - Rahman, M.
AU - Deng, L. G.
AU - Boyd, A.
AU - Ribayrol, A.
AU - Wilkinson, C. D.W.
AU - Van Den Berg, J. A.
AU - Armour, D. G.
PY - 1999/5
Y1 - 1999/5
N2 - Low ion energy is accepted as an essential requirement in achieving low damage when dry etching semiconductors. In order to investigate whether low energy is sufficient we have studied the effect of a real SiCl4 reactive ion etching system as well as the effect of bombardment of separate constituent ions from a SiCl4 discharge in an low energy implanter. We find that molecular ions contribute less to deep damage than do atomic ions. Thus low damage may be promoted by using reactive etch chemistries with low ion energies and small atomic to molecular ion fractions.
AB - Low ion energy is accepted as an essential requirement in achieving low damage when dry etching semiconductors. In order to investigate whether low energy is sufficient we have studied the effect of a real SiCl4 reactive ion etching system as well as the effect of bombardment of separate constituent ions from a SiCl4 discharge in an low energy implanter. We find that molecular ions contribute less to deep damage than do atomic ions. Thus low damage may be promoted by using reactive etch chemistries with low ion energies and small atomic to molecular ion fractions.
UR - http://www.scopus.com/inward/record.url?scp=0033131705&partnerID=8YFLogxK
U2 - 10.1016/S0167-9317(99)00086-6
DO - 10.1016/S0167-9317(99)00086-6
M3 - Conference article
AN - SCOPUS:0033131705
VL - 46
SP - 299
EP - 302
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
IS - 1-4
ER -