Design considerations for low damage process plasmas

M. Rahman, L. G. Deng, A. Boyd, A. Ribayrol, C. D.W. Wilkinson, J. A. Van Den Berg, D. G. Armour

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

Low ion energy is accepted as an essential requirement in achieving low damage when dry etching semiconductors. In order to investigate whether low energy is sufficient we have studied the effect of a real SiCl4 reactive ion etching system as well as the effect of bombardment of separate constituent ions from a SiCl4 discharge in an low energy implanter. We find that molecular ions contribute less to deep damage than do atomic ions. Thus low damage may be promoted by using reactive etch chemistries with low ion energies and small atomic to molecular ion fractions.

Original languageEnglish
Pages (from-to)299-302
Number of pages4
JournalMicroelectronic Engineering
Volume46
Issue number1-4
DOIs
Publication statusPublished - May 1999
Externally publishedYes
EventInternational Conference on Micro- and Nano-Fabrication - Leuven, Belgium
Duration: 22 Sep 199824 Sep 1998

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  • Cite this

    Rahman, M., Deng, L. G., Boyd, A., Ribayrol, A., Wilkinson, C. D. W., Van Den Berg, J. A., & Armour, D. G. (1999). Design considerations for low damage process plasmas. Microelectronic Engineering, 46(1-4), 299-302. https://doi.org/10.1016/S0167-9317(99)00086-6