Abstract
Low ion energy is accepted as an essential requirement in achieving low damage when dry etching semiconductors. In order to investigate whether low energy is sufficient we have studied the effect of a real SiCl4 reactive ion etching system as well as the effect of bombardment of separate constituent ions from a SiCl4 discharge in an low energy implanter. We find that molecular ions contribute less to deep damage than do atomic ions. Thus low damage may be promoted by using reactive etch chemistries with low ion energies and small atomic to molecular ion fractions.
| Original language | English |
|---|---|
| Pages (from-to) | 299-302 |
| Number of pages | 4 |
| Journal | Microelectronic Engineering |
| Volume | 46 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - May 1999 |
| Externally published | Yes |
| Event | International Conference on Micro- and Nano-Fabrication - Leuven, Belgium Duration: 22 Sep 1998 → 24 Sep 1998 |
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Rahman, M., Deng, L. G., Boyd, A., Ribayrol, A., Wilkinson, C. D. W., Van Den Berg, J. A., & Armour, D. G. (1999). Design considerations for low damage process plasmas. Microelectronic Engineering, 46(1-4), 299-302. https://doi.org/10.1016/S0167-9317(99)00086-6