Designs for λ= 1.55 μm GaN-Based Intersubband Laser Active Region

Keyphrases

• Active Regions 100%
• GaN-based 100%
• Laser Leveling 100%
• Intersubband Laser 100%
• AlGaN Quantum Wells 100%
• Systematic Design 50%
• Three-level 50%
• Near-infrared 50%
• Laser System 50%
• Optical Communications 50%
• Level Energies 50%
• Energy Separation 50%
• Quantum Well Structure 50%
• Aluminum Gallium Nitride (AlGaN) 50%
• Scattering Rate 50%
• Longitudinal Optical Phonons 50%
• Phonon Resonance 50%
• Rate Calculations 50%
• Optimal Structural Parameters 50%
• Carrier Screening Effect 50%
• Three-level Laser 50%
• Coupled Quantum Wells 50%
• Gain Coefficient 50%
• Many-body 50%

Engineering

• Quantum Well 100%
• Active Region 100%
• Good Agreement 33%
• Screening Effect 33%
• Experimental Measurement 33%
• Figure of Merit 33%
• Laser System 33%
• Emitting Laser 33%
• Structural Parameter 33%
• Level Energy 33%
• Optical Phonon 33%
• Energy Separation 33%
• Gain Coefficient 33%