Differential surface photovoltage spectroscopy of δ-doped GaAs/AlAs multiple quantum wells below and close to Mott transition

J. Kavaliauskas; G. Krivaité; B. Čechavičius; G. Valušis; D. Seliuta; B. Sherliker; M. Halsall; P. Harrison; E. Linfield; M. Steer

doi:10.1002/pssb.200743348

Differential surface photovoltage spectroscopy of δ-doped GaAs/AlAs multiple quantum wells below and close to Mott transition

J. Kavaliauskas, G. Krivaité, B. Čechavičius, G. Valušis, D. Seliuta, B. Sherliker, M. Halsall, P. Harrison, E. Linfield, M. Steer

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Abstract

Differential surface photovoltage (DSPV) spectra of Be δ-doped GaAs/AlAs multiple quantum wells (MQWs) with doping densities below (5 × 10¹⁰ cm^-2) and near (5 × 10¹² cm ^-2) a Mott transition were studied at 300 K and 90 K. From the line shape analysis of the DSPV spectra, exhibiting obvious doping and temperature dependences, an origin of optical transitions has been revealed, The spectra of lightly doped structures were accounted for by ground state heavy and light-hole related excitonic transitions. In highly doped GaAs/AlAs MQWs the heavy-hole excitons were found to be quenched while rather broadened light-hole related transitions still exhibited an excitonic character. The experimental observations suggest that with increasing doping level phase-space filling effects dominate over Coulomb screening. The renormalization effects due to many body interactions were found to be more pronounced for the lowest heavy-hole sub-band when compared to the light-hole one.

Original language	English
Pages (from-to)	82-88
Number of pages	7
Journal	Physica Status Solidi (B) Basic Research
Volume	245
Issue number	1
Early online date	25 Oct 2007
DOIs	https://doi.org/10.1002/pssb.200743348
Publication status	Published - 1 Jan 2008
Externally published	Yes

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Kavaliauskas, J., Krivaité, G., Čechavičius, B., Valušis, G., Seliuta, D., Sherliker, B., Halsall, M., Harrison, P., Linfield, E., & Steer, M. (2008). Differential surface photovoltage spectroscopy of δ-doped GaAs/AlAs multiple quantum wells below and close to Mott transition. Physica Status Solidi (B) Basic Research, 245(1), 82-88. https://doi.org/10.1002/pssb.200743348

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title = "Differential surface photovoltage spectroscopy of δ-doped GaAs/AlAs multiple quantum wells below and close to Mott transition",

abstract = "Differential surface photovoltage (DSPV) spectra of Be δ-doped GaAs/AlAs multiple quantum wells (MQWs) with doping densities below (5 × 1010 cm-2) and near (5 × 1012 cm -2) a Mott transition were studied at 300 K and 90 K. From the line shape analysis of the DSPV spectra, exhibiting obvious doping and temperature dependences, an origin of optical transitions has been revealed, The spectra of lightly doped structures were accounted for by ground state heavy and light-hole related excitonic transitions. In highly doped GaAs/AlAs MQWs the heavy-hole excitons were found to be quenched while rather broadened light-hole related transitions still exhibited an excitonic character. The experimental observations suggest that with increasing doping level phase-space filling effects dominate over Coulomb screening. The renormalization effects due to many body interactions were found to be more pronounced for the lowest heavy-hole sub-band when compared to the light-hole one.",

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author = "J. Kavaliauskas and G. Krivait{\'e} and B. {\v C}echavi{\v c}ius and G. Valu{\v s}is and D. Seliuta and B. Sherliker and M. Halsall and P. Harrison and E. Linfield and M. Steer",

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Kavaliauskas, J, Krivaité, G, Čechavičius, B, Valušis, G, Seliuta, D, Sherliker, B, Halsall, M, Harrison, P, Linfield, E & Steer, M 2008, 'Differential surface photovoltage spectroscopy of δ-doped GaAs/AlAs multiple quantum wells below and close to Mott transition', Physica Status Solidi (B) Basic Research, vol. 245, no. 1, pp. 82-88. https://doi.org/10.1002/pssb.200743348

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T1 - Differential surface photovoltage spectroscopy of δ-doped GaAs/AlAs multiple quantum wells below and close to Mott transition

AU - Kavaliauskas, J.

AU - Krivaité, G.

AU - Čechavičius, B.

AU - Valušis, G.

AU - Seliuta, D.

AU - Sherliker, B.

AU - Halsall, M.

AU - Harrison, P.

AU - Linfield, E.

AU - Steer, M.

PY - 2008/1/1

Y1 - 2008/1/1

N2 - Differential surface photovoltage (DSPV) spectra of Be δ-doped GaAs/AlAs multiple quantum wells (MQWs) with doping densities below (5 × 1010 cm-2) and near (5 × 1012 cm -2) a Mott transition were studied at 300 K and 90 K. From the line shape analysis of the DSPV spectra, exhibiting obvious doping and temperature dependences, an origin of optical transitions has been revealed, The spectra of lightly doped structures were accounted for by ground state heavy and light-hole related excitonic transitions. In highly doped GaAs/AlAs MQWs the heavy-hole excitons were found to be quenched while rather broadened light-hole related transitions still exhibited an excitonic character. The experimental observations suggest that with increasing doping level phase-space filling effects dominate over Coulomb screening. The renormalization effects due to many body interactions were found to be more pronounced for the lowest heavy-hole sub-band when compared to the light-hole one.

AB - Differential surface photovoltage (DSPV) spectra of Be δ-doped GaAs/AlAs multiple quantum wells (MQWs) with doping densities below (5 × 1010 cm-2) and near (5 × 1012 cm -2) a Mott transition were studied at 300 K and 90 K. From the line shape analysis of the DSPV spectra, exhibiting obvious doping and temperature dependences, an origin of optical transitions has been revealed, The spectra of lightly doped structures were accounted for by ground state heavy and light-hole related excitonic transitions. In highly doped GaAs/AlAs MQWs the heavy-hole excitons were found to be quenched while rather broadened light-hole related transitions still exhibited an excitonic character. The experimental observations suggest that with increasing doping level phase-space filling effects dominate over Coulomb screening. The renormalization effects due to many body interactions were found to be more pronounced for the lowest heavy-hole sub-band when compared to the light-hole one.

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Differential surface photovoltage spectroscopy of δ-doped GaAs/AlAs multiple quantum wells below and close to Mott transition

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