TY - JOUR
T1 - Differentiating between constant and concentration-dependent diffusion coefficients via the optical spectroscopy of excitons in quantum wells
AU - Harrison, P.
PY - 1996/7/1
Y1 - 1996/7/1
N2 - Exciton energy calculations, including the binding energy, are presented which show that quantum wells subject to diffusion with constant and concentration-dependent diffusion coefficients can have the same emission/absorption energy. The proposal of I Harrison (1994 Semicond. Sci. Technol. 9 2053), that it is possible to distinguish between these two forms of the diffusion coefficient by fitting emission energies in annealed quantum wells for several different well widths, is validated for a typical II-VI system in which the dominant recombination process is excitonic. An analysis of recent experimental data of exciton energies in CdTe-Cd1-XMnxTe quantum wells, before and after a rapid thermal anneal, demonstrates that the diffusion of Mn from the barriers into the wells can be explained in terms of a constant diffusion coefficient.
AB - Exciton energy calculations, including the binding energy, are presented which show that quantum wells subject to diffusion with constant and concentration-dependent diffusion coefficients can have the same emission/absorption energy. The proposal of I Harrison (1994 Semicond. Sci. Technol. 9 2053), that it is possible to distinguish between these two forms of the diffusion coefficient by fitting emission energies in annealed quantum wells for several different well widths, is validated for a typical II-VI system in which the dominant recombination process is excitonic. An analysis of recent experimental data of exciton energies in CdTe-Cd1-XMnxTe quantum wells, before and after a rapid thermal anneal, demonstrates that the diffusion of Mn from the barriers into the wells can be explained in terms of a constant diffusion coefficient.
KW - Annealing
KW - Diffusion
KW - Deep level transient spectroscopy
KW - Energy absorption
KW - Excitons
KW - Semiconducting intermetallics
KW - Semiconductor quantum wells
UR - http://www.scopus.com/inward/record.url?scp=0030190450&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/11/7/008
DO - 10.1088/0268-1242/11/7/008
M3 - Article
AN - SCOPUS:0030190450
VL - 11
SP - 1022
EP - 1025
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 7
ER -