Digitally graded GaAs/Al0.44Ga0.56As quantum-cascade laser

D. Indjin, S. Tomić, Z. Ikonić, P. Harrison, R. W. Kelsall, V. Milanović, S. Kočinac

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


A method for the optimal design and realization of a GaAs/Al0.44Ga0.56As quantum-cascade laser (QCL) is presented. Firstly, an optimal, smooth active region profile is derived, using inverse spectral theory. A digitally graded laser structure is then designed, having an approximately equivalent potential profile. The gain and threshold current of the optimized device are calculated using a 15-level self-consistent rate equation model, and are shown to represent substantial improvements over the figures obtained, using the same calculation method, for the recently reported room temperature GaAs/Al0.44Ga0.56As QCL of Page et al. (Appl. Phys. Lett. 78 (2001) 3529).

Original languageEnglish
Pages (from-to)620-622
Number of pages3
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number1-4
Early online date27 Feb 2003
Publication statusPublished - 1 Apr 2003
Externally publishedYes
EventInternational Conference on Superlattices, Nano-structures and Nano-devices ICSNN 2002 o-structures and Nano-devices ICSNN 2002 - Toulouse, France
Duration: 22 Jul 200226 Jul 2002


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