Digitally graded GaAs/Al0.44Ga0.56As quantum-cascade laser

D. Indjin; S. Tomić; Z. Ikonić; P. Harrison; R. W. Kelsall; V. Milanović; S. Kočinac

doi:10.1016/S1386-9477(02)00901-3

Digitally graded GaAs/Al_0.44Ga_0.56As quantum-cascade laser

D. Indjin, S. Tomić, Z. Ikonić, P. Harrison, R. W. Kelsall, V. Milanović, S. Kočinac

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

A method for the optimal design and realization of a GaAs/Al_0.44Ga_0.56As quantum-cascade laser (QCL) is presented. Firstly, an optimal, smooth active region profile is derived, using inverse spectral theory. A digitally graded laser structure is then designed, having an approximately equivalent potential profile. The gain and threshold current of the optimized device are calculated using a 15-level self-consistent rate equation model, and are shown to represent substantial improvements over the figures obtained, using the same calculation method, for the recently reported room temperature GaAs/Al_0.44Ga_0.56As QCL of Page et al. (Appl. Phys. Lett. 78 (2001) 3529).

Original language	English
Pages (from-to)	620-622
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	17
Issue number	1-4
Early online date	27 Feb 2003
DOIs	https://doi.org/10.1016/S1386-9477(02)00901-3
Publication status	Published - 1 Apr 2003
Externally published	Yes
Event	International Conference on Superlattices, Nano-structures and Nano-devices ICSNN 2002 o-structures and Nano-devices ICSNN 2002 - Toulouse, France Duration: 22 Jul 2002 → 26 Jul 2002

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title = "Digitally graded GaAs/Al0.44Ga0.56As quantum-cascade laser",

abstract = "A method for the optimal design and realization of a GaAs/Al0.44Ga0.56As quantum-cascade laser (QCL) is presented. Firstly, an optimal, smooth active region profile is derived, using inverse spectral theory. A digitally graded laser structure is then designed, having an approximately equivalent potential profile. The gain and threshold current of the optimized device are calculated using a 15-level self-consistent rate equation model, and are shown to represent substantial improvements over the figures obtained, using the same calculation method, for the recently reported room temperature GaAs/Al0.44Ga0.56As QCL of Page et al. (Appl. Phys. Lett. 78 (2001) 3529).",

keywords = "Gain optimization, Quantum-cascade laser",

author = "D. Indjin and S. Tomi{\'c} and Z. Ikoni{\'c} and P. Harrison and Kelsall, \{R. W.\} and V. Milanovi{\'c} and S. Ko{\v c}inac",

year = "2003",

month = apr,

day = "1",

doi = "10.1016/S1386-9477(02)00901-3",

language = "English",

volume = "17",

pages = "620--622",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier BV",

number = "1-4",

note = "International Conference on Superlattices, Nano-structures and Nano-devices ICSNN 2002 o-structures and Nano-devices ICSNN 2002, ICSNN2002 ; Conference date: 22-07-2002 Through 26-07-2002",

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TY - JOUR

T1 - Digitally graded GaAs/Al0.44Ga0.56As quantum-cascade laser

AU - Indjin, D.

AU - Tomić, S.

AU - Ikonić, Z.

AU - Harrison, P.

AU - Kelsall, R. W.

AU - Milanović, V.

AU - Kočinac, S.

PY - 2003/4/1

Y1 - 2003/4/1

N2 - A method for the optimal design and realization of a GaAs/Al0.44Ga0.56As quantum-cascade laser (QCL) is presented. Firstly, an optimal, smooth active region profile is derived, using inverse spectral theory. A digitally graded laser structure is then designed, having an approximately equivalent potential profile. The gain and threshold current of the optimized device are calculated using a 15-level self-consistent rate equation model, and are shown to represent substantial improvements over the figures obtained, using the same calculation method, for the recently reported room temperature GaAs/Al0.44Ga0.56As QCL of Page et al. (Appl. Phys. Lett. 78 (2001) 3529).

AB - A method for the optimal design and realization of a GaAs/Al0.44Ga0.56As quantum-cascade laser (QCL) is presented. Firstly, an optimal, smooth active region profile is derived, using inverse spectral theory. A digitally graded laser structure is then designed, having an approximately equivalent potential profile. The gain and threshold current of the optimized device are calculated using a 15-level self-consistent rate equation model, and are shown to represent substantial improvements over the figures obtained, using the same calculation method, for the recently reported room temperature GaAs/Al0.44Ga0.56As QCL of Page et al. (Appl. Phys. Lett. 78 (2001) 3529).

KW - Gain optimization

KW - Quantum-cascade laser

UR - https://www.scopus.com/pages/publications/0344950290

U2 - 10.1016/S1386-9477(02)00901-3

DO - 10.1016/S1386-9477(02)00901-3

M3 - Conference article

AN - SCOPUS:0344950290

SN - 1386-9477

VL - 17

SP - 620

EP - 622

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 1-4

T2 - International Conference on Superlattices, Nano-structures and Nano-devices ICSNN 2002 o-structures and Nano-devices ICSNN 2002

Y2 - 22 July 2002 through 26 July 2002

ER -

Digitally graded GaAs/Al_0.44Ga_0.56As quantum-cascade laser

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