After previous work producing a successful 3D tomographic reconstruction of dislocations in GaN from conventional weak-beam dark-field (WBDF) images, we have reconstructed a cascade of dislocations in deformed and annealed silicon to a comparable standard using the more experimentally straightforward technique of STEM annular dark-field imaging (STEM ADF). In this mode, image contrast was much more consistent over the specimen tilt range than in conventional weak-beam dark-field imaging. Automatic acquisition software could thus restore the correct dislocation array to the field of view at each tilt angle, though manual focusing was still required. Reconstruction was carried out by sequential iterative reconstruction technique using FEI's Inspect3D software. Dislocations were distributed non-uniformly along cascades, with sparse areas between denser clumps in which individual dislocations of in-plane image width 24 nm could be distinguished in images and reconstruction. Denser areas showed more complicated stacking-fault contrast, hampering tomographic reconstruction. The general three-dimensional form of the denser areas was reproduced well, showing the dislocation array to be planar and not parallel to the foil surfaces.
|Number of pages||4|
|Journal||Journal of Physics: Conference Series|
|Early online date||25 Sep 2008|
|Publication status||Published - 25 Sep 2008|
|Event||2007 Electron Microscopy and Analysis Group Conference - Glasgow Caledonian University, Glasgow, United Kingdom|
Duration: 3 Sep 2007 → 7 Sep 2007
http://www.iop.org/activity/groups/subject/emag/ (Link to Electron Microscopy and Analysis Group Website)