Dopant behaviour and damage annealing in silicon implanted with 1 keV arsenic

S. Whelan, V. Privitera, G. Mannino, M. Italia, C. Bongiorno, E. Napolitani, E. J H Collart, J. A. Van den Berg

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The level of activation in ultra-shallow As doped Si as a function of the anneal condition has been investigated with spreading resistance profiling (SRP), four point probe (FPP) and Van der Pauw (VDP) methods. Double alignment medium energy ion scattering (MEIS) and low energy secondary ion mass spectrometry (SIMS) have been used to assess the damage annealing and dopant behaviour in the near surface regions. An inactive dopant solid solution was formed in Si following re-growth of the amorphous layer. When annealing in an oxidising ambient, although a high fraction of the implanted dose remains trapped in the oxide layer, a higher level of electrical activation is observed than compared to the non-oxidising anneal. Evidence of dopant out diffusion is observed during high temperature annealing in a non-oxidising gas ambient. The processes that occur during the anneal in the near surface regions of the sample have been discussed and related to the level of dopant activation achieved.

LanguageEnglish
Pages271-275
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume186
Issue number1-4
DOIs
Publication statusPublished - Jan 2002
Externally publishedYes

Fingerprint

Arsenic
Silicon
arsenic
Doping (additives)
activation
Annealing
damage
annealing
Chemical activation
silicon
ion scattering
secondary ion mass spectrometry
solid solutions
Secondary ion mass spectrometry
alignment
Oxides
Solid solutions
dosage
oxides
energy

Cite this

Whelan, S. ; Privitera, V. ; Mannino, G. ; Italia, M. ; Bongiorno, C. ; Napolitani, E. ; Collart, E. J H ; Van den Berg, J. A. / Dopant behaviour and damage annealing in silicon implanted with 1 keV arsenic. In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms. 2002 ; Vol. 186, No. 1-4. pp. 271-275.
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Dopant behaviour and damage annealing in silicon implanted with 1 keV arsenic. / Whelan, S.; Privitera, V.; Mannino, G.; Italia, M.; Bongiorno, C.; Napolitani, E.; Collart, E. J H; Van den Berg, J. A.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 186, No. 1-4, 01.2002, p. 271-275.

Research output: Contribution to journalArticle

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AU - Whelan, S.

AU - Privitera, V.

AU - Mannino, G.

AU - Italia, M.

AU - Bongiorno, C.

AU - Napolitani, E.

AU - Collart, E. J H

AU - Van den Berg, J. A.

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