Doping of few-layered graphene and carbon nanotubes using ion implantation

U. Bangert, A. Bleloch, M. H. Gass, A. Seepujak, J. Van Den Berg

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

Doping of nanostructured materials using a clean, efficient, and site-selective route such as ion implantation would be hugely desirable for realization of large-scale production methods. Here, ion implantation is used to create uniform impurity-atom densities which are both dose and spatially controlled within multiwalled carbon nanotubes and graphene. The technique is demonstrated for a range of dopants, including silver, representing a likely candidate for optical enhancement, and boron, which is predicted to introduce a plasmon within the visible-frequency regime. Electron energy-loss spectroscopy performed within an aberration-corrected scanning transmission electron microscope, in combination with high-angle-annular-dark-field imaging, is used to pinpoint and identify the bonding configuration of single foreign species within the matrix.
Original languageEnglish
Article number245423
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume81
Issue number24
DOIs
Publication statusPublished - 18 Jun 2010
Externally publishedYes

Fingerprint

Carbon Nanotubes
Graphite
Ion implantation
Graphene
ion implantation
Carbon nanotubes
nanotubes
graphene
carbon nanotubes
Doping (additives)
production engineering
Boron
Multiwalled carbon nanotubes (MWCN)
Electron energy loss spectroscopy
Aberrations
Silver
Nanostructured materials
aberration
boron
Electron microscopes

Cite this

@article{371acf70d55b4495a5eb686cb50518e1,
title = "Doping of few-layered graphene and carbon nanotubes using ion implantation",
abstract = "Doping of nanostructured materials using a clean, efficient, and site-selective route such as ion implantation would be hugely desirable for realization of large-scale production methods. Here, ion implantation is used to create uniform impurity-atom densities which are both dose and spatially controlled within multiwalled carbon nanotubes and graphene. The technique is demonstrated for a range of dopants, including silver, representing a likely candidate for optical enhancement, and boron, which is predicted to introduce a plasmon within the visible-frequency regime. Electron energy-loss spectroscopy performed within an aberration-corrected scanning transmission electron microscope, in combination with high-angle-annular-dark-field imaging, is used to pinpoint and identify the bonding configuration of single foreign species within the matrix.",
author = "U. Bangert and A. Bleloch and Gass, {M. H.} and A. Seepujak and {Van Den Berg}, J.",
year = "2010",
month = "6",
day = "18",
doi = "10.1103/PhysRevB.81.245423",
language = "English",
volume = "81",
journal = "Physical Review B - Condensed Matter and Materials Physics",
issn = "1098-0121",
publisher = "American Physical Society",
number = "24",

}

Doping of few-layered graphene and carbon nanotubes using ion implantation. / Bangert, U.; Bleloch, A.; Gass, M. H.; Seepujak, A.; Van Den Berg, J.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 81, No. 24, 245423, 18.06.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Doping of few-layered graphene and carbon nanotubes using ion implantation

AU - Bangert, U.

AU - Bleloch, A.

AU - Gass, M. H.

AU - Seepujak, A.

AU - Van Den Berg, J.

PY - 2010/6/18

Y1 - 2010/6/18

N2 - Doping of nanostructured materials using a clean, efficient, and site-selective route such as ion implantation would be hugely desirable for realization of large-scale production methods. Here, ion implantation is used to create uniform impurity-atom densities which are both dose and spatially controlled within multiwalled carbon nanotubes and graphene. The technique is demonstrated for a range of dopants, including silver, representing a likely candidate for optical enhancement, and boron, which is predicted to introduce a plasmon within the visible-frequency regime. Electron energy-loss spectroscopy performed within an aberration-corrected scanning transmission electron microscope, in combination with high-angle-annular-dark-field imaging, is used to pinpoint and identify the bonding configuration of single foreign species within the matrix.

AB - Doping of nanostructured materials using a clean, efficient, and site-selective route such as ion implantation would be hugely desirable for realization of large-scale production methods. Here, ion implantation is used to create uniform impurity-atom densities which are both dose and spatially controlled within multiwalled carbon nanotubes and graphene. The technique is demonstrated for a range of dopants, including silver, representing a likely candidate for optical enhancement, and boron, which is predicted to introduce a plasmon within the visible-frequency regime. Electron energy-loss spectroscopy performed within an aberration-corrected scanning transmission electron microscope, in combination with high-angle-annular-dark-field imaging, is used to pinpoint and identify the bonding configuration of single foreign species within the matrix.

UR - http://www.scopus.com/inward/record.url?scp=77956321281&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.81.245423

DO - 10.1103/PhysRevB.81.245423

M3 - Article

VL - 81

JO - Physical Review B - Condensed Matter and Materials Physics

JF - Physical Review B - Condensed Matter and Materials Physics

SN - 1098-0121

IS - 24

M1 - 245423

ER -