Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

L. Fu, I. McKerracher, H. H. Tan, C. Jagadish, N. Vukmirović, P. Harrison

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Abstract

The effect of GaP strain compensation layers was investigated on ten-layer InGaAsGaAs quantum dot infrared photodetectors (QDIPs) grown by metal-organic chemical-vapor deposition. Compared with the normal QDIP structure, the insertion of GaP has led to a narrowed spectral linewidth and slightly improved detector performance. A more significant influence of GaP was observed after the structure was annealed at various temperatures. While a similar amount of wavelength tuning was obtained, the GaP QDIPs exhibited much less degradation in device characteristics with increasing annealing temperature.

Original languageEnglish
Article number073515
JournalApplied Physics Letters
Volume91
Issue number7
DOIs
Publication statusPublished - 13 Aug 2007
Externally publishedYes

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