Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

L. Fu; I. McKerracher; H. H. Tan; C. Jagadish; N. Vukmirović; P. Harrison

doi:10.1063/1.2770765

Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

L. Fu, I. McKerracher, H. H. Tan, C. Jagadish, N. Vukmirović, P. Harrison

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The effect of GaP strain compensation layers was investigated on ten-layer InGaAsGaAs quantum dot infrared photodetectors (QDIPs) grown by metal-organic chemical-vapor deposition. Compared with the normal QDIP structure, the insertion of GaP has led to a narrowed spectral linewidth and slightly improved detector performance. A more significant influence of GaP was observed after the structure was annealed at various temperatures. While a similar amount of wavelength tuning was obtained, the GaP QDIPs exhibited much less degradation in device characteristics with increasing annealing temperature.

Original language	English
Article number	073515
Journal	Applied Physics Letters
Volume	91
Issue number	7
DOIs	https://doi.org/10.1063/1.2770765
Publication status	Published - 13 Aug 2007
Externally published	Yes

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title = "Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition",

abstract = "The effect of GaP strain compensation layers was investigated on ten-layer InGaAsGaAs quantum dot infrared photodetectors (QDIPs) grown by metal-organic chemical-vapor deposition. Compared with the normal QDIP structure, the insertion of GaP has led to a narrowed spectral linewidth and slightly improved detector performance. A more significant influence of GaP was observed after the structure was annealed at various temperatures. While a similar amount of wavelength tuning was obtained, the GaP QDIPs exhibited much less degradation in device characteristics with increasing annealing temperature.",

keywords = "GaP strain compensation layers, GaAs∕GaAs quantum dot infrared photodetectors (QDIPs)",

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note = "Funding Information: The authors would like to thank M. Aggett, T. Halstead, and D. Gibson for their excellent technical assistance. The financial support from Australian Research Council is also acknowledged. ",

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doi = "10.1063/1.2770765",

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T1 - Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

AU - Fu, L.

AU - McKerracher, I.

AU - Tan, H. H.

AU - Jagadish, C.

AU - Vukmirović, N.

AU - Harrison, P.

N1 - Funding Information: The authors would like to thank M. Aggett, T. Halstead, and D. Gibson for their excellent technical assistance. The financial support from Australian Research Council is also acknowledged.

PY - 2007/8/13

Y1 - 2007/8/13

N2 - The effect of GaP strain compensation layers was investigated on ten-layer InGaAsGaAs quantum dot infrared photodetectors (QDIPs) grown by metal-organic chemical-vapor deposition. Compared with the normal QDIP structure, the insertion of GaP has led to a narrowed spectral linewidth and slightly improved detector performance. A more significant influence of GaP was observed after the structure was annealed at various temperatures. While a similar amount of wavelength tuning was obtained, the GaP QDIPs exhibited much less degradation in device characteristics with increasing annealing temperature.

AB - The effect of GaP strain compensation layers was investigated on ten-layer InGaAsGaAs quantum dot infrared photodetectors (QDIPs) grown by metal-organic chemical-vapor deposition. Compared with the normal QDIP structure, the insertion of GaP has led to a narrowed spectral linewidth and slightly improved detector performance. A more significant influence of GaP was observed after the structure was annealed at various temperatures. While a similar amount of wavelength tuning was obtained, the GaP QDIPs exhibited much less degradation in device characteristics with increasing annealing temperature.

KW - GaP strain compensation layers

KW - GaAs∕GaAs quantum dot infrared photodetectors (QDIPs)

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Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

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