Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition

L. Fu, I. McKerracher, H. H. Tan, C. Jagadish, N. Vukmirović, P. Harrison

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Effect of GaP strain compensation layers on rapid thermally annealed InGaAs/GaAs quantum dot infrared photodetectors grown by metal-organic chemical-vapor deposition'. Together they form a unique fingerprint.

Physics & Astronomy