Effect of interface disorder on the optical properties of CdTe-Cd1-xMnxTe microstructures

T. Stirner; P. Harrison; W. E. Hagston; J. P. Goodwin

doi:10.1016/0039-6028(94)90061-2

Effect of interface disorder on the optical properties of CdTe-Cd_1-xMn_xTe microstructures

T. Stirner, P. Harrison, W. E. Hagston, J. P. Goodwin

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

High quality CdTe/Cd_1-xMn_xTe quantum well structures can be routinely grown in the authors' laboratory by molecular beam epitaxy (MBE). At temperatures of ∼ 2 K these structures have optical linewidths ≲ 3 meV for quantum well widths ≲ 20 Å. The present paper shows how information on the nature and extent of the interface roughness in such systems can be deduced from studies of the optical linewidths and Stokes' shifts.

Original language	English
Pages (from-to)	417-426
Number of pages	10
Journal	Surface Science
Volume	313
Issue number	3
DOIs	https://doi.org/10.1016/0039-6028(94)90061-2
Publication status	Published - 1 Jul 1994
Externally published	Yes

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abstract = "High quality CdTe/Cd1-xMnxTe quantum well structures can be routinely grown in the authors' laboratory by molecular beam epitaxy (MBE). At temperatures of ∼ 2 K these structures have optical linewidths ≲ 3 meV for quantum well widths ≲ 20 {\AA}. The present paper shows how information on the nature and extent of the interface roughness in such systems can be deduced from studies of the optical linewidths and Stokes' shifts.",

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AU - Stirner, T.

AU - Harrison, P.

AU - Hagston, W. E.

AU - Goodwin, J. P.

PY - 1994/7/1

Y1 - 1994/7/1

N2 - High quality CdTe/Cd1-xMnxTe quantum well structures can be routinely grown in the authors' laboratory by molecular beam epitaxy (MBE). At temperatures of ∼ 2 K these structures have optical linewidths ≲ 3 meV for quantum well widths ≲ 20 Å. The present paper shows how information on the nature and extent of the interface roughness in such systems can be deduced from studies of the optical linewidths and Stokes' shifts.

AB - High quality CdTe/Cd1-xMnxTe quantum well structures can be routinely grown in the authors' laboratory by molecular beam epitaxy (MBE). At temperatures of ∼ 2 K these structures have optical linewidths ≲ 3 meV for quantum well widths ≲ 20 Å. The present paper shows how information on the nature and extent of the interface roughness in such systems can be deduced from studies of the optical linewidths and Stokes' shifts.

KW - quantum well

KW - molecular beam epitaxy (MBE)

KW - optical properties

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U2 - 10.1016/0039-6028(94)90061-2

DO - 10.1016/0039-6028(94)90061-2

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JO - Surface Science Letters

JF - Surface Science Letters

SN - 0039-6028

IS - 3

ER -

Effect of interface disorder on the optical properties of CdTe-Cd_1-xMn_xTe microstructures

Abstract

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