Effect of interface disorder on the optical properties of CdTe-Cd1-xMnxTe microstructures

T. Stirner; P. Harrison; W. E. Hagston; J. P. Goodwin

doi:10.1016/0039-6028(94)90061-2

Effect of interface disorder on the optical properties of CdTe-Cd_1-xMn_xTe microstructures

T. Stirner, P. Harrison, W. E. Hagston, J. P. Goodwin

University of Hull

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

High quality CdTe/Cd_1-xMn_xTe quantum well structures can be routinely grown in the authors' laboratory by molecular beam epitaxy (MBE). At temperatures of ∼ 2 K these structures have optical linewidths ≲ 3 meV for quantum well widths ≲ 20 Å. The present paper shows how information on the nature and extent of the interface roughness in such systems can be deduced from studies of the optical linewidths and Stokes' shifts.

Original language	English
Pages (from-to)	417-426
Number of pages	10
Journal	Surface Science
Volume	313
Issue number	3
DOIs	https://doi.org/10.1016/0039-6028(94)90061-2
Publication status	Published - 1 Jul 1994
Externally published	Yes

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title = "Effect of interface disorder on the optical properties of CdTe-Cd1-xMnxTe microstructures",

abstract = "High quality CdTe/Cd1-xMnxTe quantum well structures can be routinely grown in the authors' laboratory by molecular beam epitaxy (MBE). At temperatures of ∼ 2 K these structures have optical linewidths ≲ 3 meV for quantum well widths ≲ 20 {\AA}. The present paper shows how information on the nature and extent of the interface roughness in such systems can be deduced from studies of the optical linewidths and Stokes' shifts.",

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year = "1994",

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T1 - Effect of interface disorder on the optical properties of CdTe-Cd1-xMnxTe microstructures

AU - Stirner, T.

AU - Harrison, P.

AU - Hagston, W. E.

AU - Goodwin, J. P.

PY - 1994/7/1

Y1 - 1994/7/1

N2 - High quality CdTe/Cd1-xMnxTe quantum well structures can be routinely grown in the authors' laboratory by molecular beam epitaxy (MBE). At temperatures of ∼ 2 K these structures have optical linewidths ≲ 3 meV for quantum well widths ≲ 20 Å. The present paper shows how information on the nature and extent of the interface roughness in such systems can be deduced from studies of the optical linewidths and Stokes' shifts.

AB - High quality CdTe/Cd1-xMnxTe quantum well structures can be routinely grown in the authors' laboratory by molecular beam epitaxy (MBE). At temperatures of ∼ 2 K these structures have optical linewidths ≲ 3 meV for quantum well widths ≲ 20 Å. The present paper shows how information on the nature and extent of the interface roughness in such systems can be deduced from studies of the optical linewidths and Stokes' shifts.

KW - quantum well

KW - molecular beam epitaxy (MBE)

KW - optical properties

UR - https://www.scopus.com/pages/publications/0028467639

U2 - 10.1016/0039-6028(94)90061-2

DO - 10.1016/0039-6028(94)90061-2

M3 - Article

AN - SCOPUS:0028467639

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VL - 313

SP - 417

EP - 426

JO - Surface Science

JF - Surface Science

IS - 3

ER -

Effect of interface disorder on the optical properties of CdTe-Cd_1-xMn_xTe microstructures

Abstract

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