Effect of quantum-well confinement on acceptor state lifetime in δ-doped GaAs/AlAs multiple quantum wells

W. M. Zheng; M. P. Halsall; P. Harrison; J. P.R. Wells; I. V. Bradley; M. J. Steer

doi:10.1063/1.1623950

Effect of quantum-well confinement on acceptor state lifetime in δ-doped GaAs/AlAs multiple quantum wells

W. M. Zheng, M. P. Halsall, P. Harrison, J. P.R. Wells, I. V. Bradley, M. J. Steer

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13 Citations (Scopus)

Abstract

Using far-infrared time-resolved spectroscopy, we have investigated the effect of quantum-well confinement on the lifetime of shallow acceptor states in GaAs/AlAs multiple quantum wells with Be δ-doping at the well center. Low-temperature far-infrared absorption measurements clearly show three principal absorption lines due to transitions of Be acceptor states from the ground state to the first three odd-parity excited states, respectively. It is found that the lifetime of excited states monotonically reduces with decreasing quantum-well width, from 350 ps in bulk to 55 ps in a 100 Å well. We suggest that the effect of quantum-well confinement on zone-fold acoustic-phonon modes increases the intra-acceptor scattering rate of acoustic-phonon-assisted relaxation.

Original language	English
Pages (from-to)	3719-3721
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	18
Early online date	28 Oct 2003
DOIs	https://doi.org/10.1063/1.1623950
Publication status	Published - 3 Nov 2003
Externally published	Yes

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title = "Effect of quantum-well confinement on acceptor state lifetime in δ-doped GaAs/AlAs multiple quantum wells",

abstract = "Using far-infrared time-resolved spectroscopy, we have investigated the effect of quantum-well confinement on the lifetime of shallow acceptor states in GaAs/AlAs multiple quantum wells with Be δ-doping at the well center. Low-temperature far-infrared absorption measurements clearly show three principal absorption lines due to transitions of Be acceptor states from the ground state to the first three odd-parity excited states, respectively. It is found that the lifetime of excited states monotonically reduces with decreasing quantum-well width, from 350 ps in bulk to 55 ps in a 100 {\AA} well. We suggest that the effect of quantum-well confinement on zone-fold acoustic-phonon modes increases the intra-acceptor scattering rate of acoustic-phonon-assisted relaxation.",

keywords = "Absorption, Relaxation processes, Semiconducting aluminum compounds, Semiconducting gallium arsenide, Semiconductor doping, Spectroscopy",

author = "Zheng, {W. M.} and Halsall, {M. P.} and P. Harrison and Wells, {J. P.R.} and Bradley, {I. V.} and Steer, {M. J.}",

year = "2003",

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doi = "10.1063/1.1623950",

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T1 - Effect of quantum-well confinement on acceptor state lifetime in δ-doped GaAs/AlAs multiple quantum wells

AU - Zheng, W. M.

AU - Halsall, M. P.

AU - Harrison, P.

AU - Wells, J. P.R.

AU - Bradley, I. V.

AU - Steer, M. J.

PY - 2003/11/3

Y1 - 2003/11/3

N2 - Using far-infrared time-resolved spectroscopy, we have investigated the effect of quantum-well confinement on the lifetime of shallow acceptor states in GaAs/AlAs multiple quantum wells with Be δ-doping at the well center. Low-temperature far-infrared absorption measurements clearly show three principal absorption lines due to transitions of Be acceptor states from the ground state to the first three odd-parity excited states, respectively. It is found that the lifetime of excited states monotonically reduces with decreasing quantum-well width, from 350 ps in bulk to 55 ps in a 100 Å well. We suggest that the effect of quantum-well confinement on zone-fold acoustic-phonon modes increases the intra-acceptor scattering rate of acoustic-phonon-assisted relaxation.

AB - Using far-infrared time-resolved spectroscopy, we have investigated the effect of quantum-well confinement on the lifetime of shallow acceptor states in GaAs/AlAs multiple quantum wells with Be δ-doping at the well center. Low-temperature far-infrared absorption measurements clearly show three principal absorption lines due to transitions of Be acceptor states from the ground state to the first three odd-parity excited states, respectively. It is found that the lifetime of excited states monotonically reduces with decreasing quantum-well width, from 350 ps in bulk to 55 ps in a 100 Å well. We suggest that the effect of quantum-well confinement on zone-fold acoustic-phonon modes increases the intra-acceptor scattering rate of acoustic-phonon-assisted relaxation.

KW - Absorption

KW - Relaxation processes

KW - Semiconducting aluminum compounds

KW - Semiconducting gallium arsenide

KW - Semiconductor doping

KW - Spectroscopy

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DO - 10.1063/1.1623950

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JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 18

ER -

Effect of quantum-well confinement on acceptor state lifetime in δ-doped GaAs/AlAs multiple quantum wells

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