Effects of Temperature on the Ion-Induced Bending of Germanium and Silicon Nanowires

Osmane Camara, Imran Hanif, Matheus Araujo Tunes, Robert Harrison, Graeme Greaves, Stephen Donnelly, Jonathan Hinks

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Nanowires can be manipulated using an ion beam via a phenomenon known as ion-induced bending (IIB). While the mechanisms behind IIB are still the subject of debate, accumulation of point defects or amorphisation are often cited as possible driving mechanisms. Previous results in the literature on IIB of Ge and Si nanowires have shown that after irradiation the aligned nanowires are fully amorphous. Experiments were recently reported in which crystalline seeds were preserved in otherwise-amorphous ion-beam-bent Si nanowires which then facilitated solid-phase epitaxial growth (SPEG) during subsequent annealing. However, the ion-induced alignment of the nanowires was lost during the SPEG. In this work, in situ ion irradiations in a transmission electron microscope at 400°C and 500°C were performed on Ge and Si nanowires, respectively, to supress amorphisation and the build-up of point defects. Both the Ge and Si nanowires were found to bend during irradiation thus drawing into question the role of mechanisms based on damage accumulation under such conditions. These experiments demonstrate for the first time a simple way of realigning single-crystal Ge and Si nanowires via IIB whilst preserving their crystal structure.
Original languageEnglish
Article number075056
JournalMaterials Research Express
Volume4
Issue number7
DOIs
Publication statusPublished - 31 Jul 2017

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Germanium
Silicon
Nanowires
Ions
Temperature
Amorphization
Point defects
Epitaxial growth
Ion beams
Irradiation
Ion bombardment
Seed
Electron microscopes
Crystal structure
Experiments
Single crystals
Annealing
Crystalline materials

Cite this

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title = "Effects of Temperature on the Ion-Induced Bending of Germanium and Silicon Nanowires",
abstract = "Nanowires can be manipulated using an ion beam via a phenomenon known as ion-induced bending (IIB). While the mechanisms behind IIB are still the subject of debate, accumulation of point defects or amorphisation are often cited as possible driving mechanisms. Previous results in the literature on IIB of Ge and Si nanowires have shown that after irradiation the aligned nanowires are fully amorphous. Experiments were recently reported in which crystalline seeds were preserved in otherwise-amorphous ion-beam-bent Si nanowires which then facilitated solid-phase epitaxial growth (SPEG) during subsequent annealing. However, the ion-induced alignment of the nanowires was lost during the SPEG. In this work, in situ ion irradiations in a transmission electron microscope at 400°C and 500°C were performed on Ge and Si nanowires, respectively, to supress amorphisation and the build-up of point defects. Both the Ge and Si nanowires were found to bend during irradiation thus drawing into question the role of mechanisms based on damage accumulation under such conditions. These experiments demonstrate for the first time a simple way of realigning single-crystal Ge and Si nanowires via IIB whilst preserving their crystal structure.",
keywords = "Ion induced bending of nanowires, Radiation damage, Nanowires, Nanomanipulation, In situ transmission electron microscopy, Semiconductors, Temperature",
author = "Osmane Camara and Imran Hanif and Tunes, {Matheus Araujo} and Robert Harrison and Graeme Greaves and Stephen Donnelly and Jonathan Hinks",
year = "2017",
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language = "English",
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Effects of Temperature on the Ion-Induced Bending of Germanium and Silicon Nanowires. / Camara, Osmane; Hanif, Imran; Tunes, Matheus Araujo; Harrison, Robert; Greaves, Graeme; Donnelly, Stephen; Hinks, Jonathan.

In: Materials Research Express, Vol. 4, No. 7, 075056, 31.07.2017.

Research output: Contribution to journalArticle

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T1 - Effects of Temperature on the Ion-Induced Bending of Germanium and Silicon Nanowires

AU - Camara, Osmane

AU - Hanif, Imran

AU - Tunes, Matheus Araujo

AU - Harrison, Robert

AU - Greaves, Graeme

AU - Donnelly, Stephen

AU - Hinks, Jonathan

PY - 2017/7/31

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