TY - JOUR
T1 - Electric Field Domains in p-Si/SiGe Quantum Cascade Structures
AU - Ikonić, Zoran
AU - Harrison, Paul
AU - Kelsall, Robert W.
N1 - Funding Information:
Manuscript received April 11, 2005; revised August 26, 2005. This work was supported in part by Defense Advanced Research Projects Agency/U.S. Air Force under Contract F19628-99-C-0074, and EPSRC, U.K., under Grant GR/S27528/01. The review of this paper was arranged by Editor S. Datta.
PY - 2006/2/1
Y1 - 2006/2/1
N2 - The formation of domains in quantum cascade structures is one of the mechanisms strongly affecting the operation of quantum cascade lasers, quantum-well infrared detectors, and other devices. In this paper, we consider the problem of domain formation in p-doped Si/SiGe quantum cascades, using a carrier scattering transport framework. In effect, the hole flow along the cascade is described via scattering between quantized states belonging to neighboring periods, caused by phonons, alloy disorder, and carrier-carrier interactions. The generation of either periodic or of nonperiodic domains is studied in uniformly doped cascades, as well as the influence of modulation doping of cascades on the domain formation.
AB - The formation of domains in quantum cascade structures is one of the mechanisms strongly affecting the operation of quantum cascade lasers, quantum-well infrared detectors, and other devices. In this paper, we consider the problem of domain formation in p-doped Si/SiGe quantum cascades, using a carrier scattering transport framework. In effect, the hole flow along the cascade is described via scattering between quantized states belonging to neighboring periods, caused by phonons, alloy disorder, and carrier-carrier interactions. The generation of either periodic or of nonperiodic domains is studied in uniformly doped cascades, as well as the influence of modulation doping of cascades on the domain formation.
KW - Domain formation
KW - Quantum cascade structures
KW - SiGe
UR - http://www.scopus.com/inward/record.url?scp=31744433949&partnerID=8YFLogxK
U2 - 10.1109/TED.2005.862498
DO - 10.1109/TED.2005.862498
M3 - Article
AN - SCOPUS:31744433949
VL - 53
SP - 189
EP - 195
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 2
M1 - 1580853
ER -