Electrical and structural properties of ultrathin SiON films on Si prepared by plasma nitridation

E. Hourdakis, A. G. Nassiopoulou, A. Parisini, M. A. Reading, J. A. Van Den Berg, L. Sygellou, S. Ladas, P. Petrik, A. Nutsch, M. Wolf, G. Roeder

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The authors combined electrical and structural characterizations with analytical and spectroscopic measurements in order to fully analyze oxynitride nanofilms on Si that were produced in a minibatch type plasma nitridation reactor. The authors demonstrate that for the investigated samples the result of nitridation is different in the 2-nm-thick SiO2 films compared to the 5-nm-thick films. In the first case, nitridation results in an increase of the oxide film thickness compared to the non-nitrided film, with a consequent decrease in leakage current and an increase in the electrically measured equivalent oxide thickness (EOT). In contrast, nitridation of the 5-nm-thick SiO2 films leads to a reduction of both the leakage current and EOT. Finally, the authors demonstrate that the applied nitridation process results in the desired nitrogen profile with high nitrogen concentration near the top surface or the middle of the SiON film and low nitrogen concentration near the SiON/Si interface, which leads to a relatively low density of interface states at the SiON/Si interface (∼ 1011 states/ cm2) for nonannealed films.

Original languageEnglish
Article number022201
JournalJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
Volume29
Issue number2
DOIs
Publication statusPublished - Jan 2011
Externally publishedYes

Fingerprint

Nitridation
Ultrathin films
thick films
Structural properties
Electric properties
electrical properties
Plasmas
nitrogen
Thick films
leakage
Nitrogen
Interface states
oxides
Leakage currents
oxynitrides
Oxides
oxide films
film thickness
reactors
Oxide films

Cite this

Hourdakis, E. ; Nassiopoulou, A. G. ; Parisini, A. ; Reading, M. A. ; Van Den Berg, J. A. ; Sygellou, L. ; Ladas, S. ; Petrik, P. ; Nutsch, A. ; Wolf, M. ; Roeder, G. / Electrical and structural properties of ultrathin SiON films on Si prepared by plasma nitridation. In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics. 2011 ; Vol. 29, No. 2.
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Hourdakis, E, Nassiopoulou, AG, Parisini, A, Reading, MA, Van Den Berg, JA, Sygellou, L, Ladas, S, Petrik, P, Nutsch, A, Wolf, M & Roeder, G 2011, 'Electrical and structural properties of ultrathin SiON films on Si prepared by plasma nitridation', Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, vol. 29, no. 2, 022201. https://doi.org/10.1116/1.3556938

Electrical and structural properties of ultrathin SiON films on Si prepared by plasma nitridation. / Hourdakis, E.; Nassiopoulou, A. G.; Parisini, A.; Reading, M. A.; Van Den Berg, J. A.; Sygellou, L.; Ladas, S.; Petrik, P.; Nutsch, A.; Wolf, M.; Roeder, G.

In: Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 29, No. 2, 022201, 01.2011.

Research output: Contribution to journalArticle

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AU - Hourdakis, E.

AU - Nassiopoulou, A. G.

AU - Parisini, A.

AU - Reading, M. A.

AU - Van Den Berg, J. A.

AU - Sygellou, L.

AU - Ladas, S.

AU - Petrik, P.

AU - Nutsch, A.

AU - Wolf, M.

AU - Roeder, G.

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N2 - The authors combined electrical and structural characterizations with analytical and spectroscopic measurements in order to fully analyze oxynitride nanofilms on Si that were produced in a minibatch type plasma nitridation reactor. The authors demonstrate that for the investigated samples the result of nitridation is different in the 2-nm-thick SiO2 films compared to the 5-nm-thick films. In the first case, nitridation results in an increase of the oxide film thickness compared to the non-nitrided film, with a consequent decrease in leakage current and an increase in the electrically measured equivalent oxide thickness (EOT). In contrast, nitridation of the 5-nm-thick SiO2 films leads to a reduction of both the leakage current and EOT. Finally, the authors demonstrate that the applied nitridation process results in the desired nitrogen profile with high nitrogen concentration near the top surface or the middle of the SiON film and low nitrogen concentration near the SiON/Si interface, which leads to a relatively low density of interface states at the SiON/Si interface (∼ 1011 states/ cm2) for nonannealed films.

AB - The authors combined electrical and structural characterizations with analytical and spectroscopic measurements in order to fully analyze oxynitride nanofilms on Si that were produced in a minibatch type plasma nitridation reactor. The authors demonstrate that for the investigated samples the result of nitridation is different in the 2-nm-thick SiO2 films compared to the 5-nm-thick films. In the first case, nitridation results in an increase of the oxide film thickness compared to the non-nitrided film, with a consequent decrease in leakage current and an increase in the electrically measured equivalent oxide thickness (EOT). In contrast, nitridation of the 5-nm-thick SiO2 films leads to a reduction of both the leakage current and EOT. Finally, the authors demonstrate that the applied nitridation process results in the desired nitrogen profile with high nitrogen concentration near the top surface or the middle of the SiON film and low nitrogen concentration near the SiON/Si interface, which leads to a relatively low density of interface states at the SiON/Si interface (∼ 1011 states/ cm2) for nonannealed films.

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