Intersubband electroluminescence results are presented from Si/SiGe quantum cascade emitters at 3.2 THz and at temperatures up to 150 K. The effect of adding doping into the active quantum wells was studied in addition to reduced barrier widths from previous measurements. While the current through the sample is increased by the addition of doping, the emitted power is reduced through additional free carrier absorption and Coulombic scattering. Free electron laser measurements confirm the intersubband transitions in the quantum wells of the cascade devices and produce non-radiative lifetimes of ∼20 ps between 4 and 150 K.
|Number of pages
|Physica E: Low-Dimensional Systems and Nanostructures
|Early online date
|13 Dec 2002
|Published - 1 Mar 2003
|Symposium H of the Spring Meeting of the European Materials Research Society : "Silicon-Based Optoelectronics: Advances and Future Perspectives' - Strasbourgh, France
Duration: 18 Jun 2002 → 21 Jun 2002