Electroluminescence from Si/SiGe quantum cascade emitters

D. J. Paul; S. A. Lynch; R. Bates; Z. Ikonic; R. W. Kelsall; P. Harrison; D. J. Norris; S. L. Liew; A. G. Cullis; P. Murzyn; C. Pidgeon; D. D. Arnone; D. J. Robbins

doi:10.1016/S1386-9477(02)00689-6

Electroluminescence from Si/SiGe quantum cascade emitters

D. J. Paul, S. A. Lynch, R. Bates, Z. Ikonic, R. W. Kelsall, P. Harrison, D. J. Norris, S. L. Liew, A. G. Cullis, P. Murzyn, C. Pidgeon, D. D. Arnone, D. J. Robbins

Research output: Contribution to journal › Conference article › peer-review

6 Citations (Scopus)

Abstract

Intersubband electroluminescence results are presented from Si/SiGe quantum cascade emitters at 3.2 THz and at temperatures up to 150 K. The effect of adding doping into the active quantum wells was studied in addition to reduced barrier widths from previous measurements. While the current through the sample is increased by the addition of doping, the emitted power is reduced through additional free carrier absorption and Coulombic scattering. Free electron laser measurements confirm the intersubband transitions in the quantum wells of the cascade devices and produce non-radiative lifetimes of ∼20 ps between 4 and 150 K.

Original language	English
Pages (from-to)	309-314
Number of pages	6
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	16
Issue number	3-4
Early online date	13 Dec 2002
DOIs	https://doi.org/10.1016/S1386-9477(02)00689-6
Publication status	Published - 1 Mar 2003
Externally published	Yes
Event	Symposium H of the Spring Meeting of the European Materials Research Society : "Silicon-Based Optoelectronics: Advances and Future Perspectives' - Strasbourgh, France Duration: 18 Jun 2002 → 21 Jun 2002

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@article{800790ec34864fe887329fe2ca129913,

title = "Electroluminescence from Si/SiGe quantum cascade emitters",

abstract = "Intersubband electroluminescence results are presented from Si/SiGe quantum cascade emitters at 3.2 THz and at temperatures up to 150 K. The effect of adding doping into the active quantum wells was studied in addition to reduced barrier widths from previous measurements. While the current through the sample is increased by the addition of doping, the emitted power is reduced through additional free carrier absorption and Coulombic scattering. Free electron laser measurements confirm the intersubband transitions in the quantum wells of the cascade devices and produce non-radiative lifetimes of ∼20 ps between 4 and 150 K.",

keywords = "Intersubband electroluminescence, Quantum cascade emitters, Si/SiGe",

author = "Paul, {D. J.} and Lynch, {S. A.} and R. Bates and Z. Ikonic and Kelsall, {R. W.} and P. Harrison and Norris, {D. J.} and Liew, {S. L.} and Cullis, {A. G.} and P. Murzyn and C. Pidgeon and Arnone, {D. D.} and Robbins, {D. J.}",

note = "Funding Information: The work was funded by DARPA under a US Air Force contract F-19628-99-C-0074. The authors would like to thank Richard Soref for useful discussions and support.; Symposium H of the Spring Meeting of the European Materials Research Society : {"}Silicon-Based Optoelectronics: Advances and Future Perspectives', E-MRS ; Conference date: 18-06-2002 Through 21-06-2002",

year = "2003",

month = mar,

day = "1",

doi = "10.1016/S1386-9477(02)00689-6",

language = "English",

volume = "16",

pages = "309--314",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier",

number = "3-4",

}

TY - JOUR

T1 - Electroluminescence from Si/SiGe quantum cascade emitters

AU - Paul, D. J.

AU - Lynch, S. A.

AU - Bates, R.

AU - Ikonic, Z.

AU - Kelsall, R. W.

AU - Harrison, P.

AU - Norris, D. J.

AU - Liew, S. L.

AU - Cullis, A. G.

AU - Murzyn, P.

AU - Pidgeon, C.

AU - Arnone, D. D.

AU - Robbins, D. J.

N1 - Funding Information: The work was funded by DARPA under a US Air Force contract F-19628-99-C-0074. The authors would like to thank Richard Soref for useful discussions and support.

PY - 2003/3/1

Y1 - 2003/3/1

N2 - Intersubband electroluminescence results are presented from Si/SiGe quantum cascade emitters at 3.2 THz and at temperatures up to 150 K. The effect of adding doping into the active quantum wells was studied in addition to reduced barrier widths from previous measurements. While the current through the sample is increased by the addition of doping, the emitted power is reduced through additional free carrier absorption and Coulombic scattering. Free electron laser measurements confirm the intersubband transitions in the quantum wells of the cascade devices and produce non-radiative lifetimes of ∼20 ps between 4 and 150 K.

AB - Intersubband electroluminescence results are presented from Si/SiGe quantum cascade emitters at 3.2 THz and at temperatures up to 150 K. The effect of adding doping into the active quantum wells was studied in addition to reduced barrier widths from previous measurements. While the current through the sample is increased by the addition of doping, the emitted power is reduced through additional free carrier absorption and Coulombic scattering. Free electron laser measurements confirm the intersubband transitions in the quantum wells of the cascade devices and produce non-radiative lifetimes of ∼20 ps between 4 and 150 K.

KW - Intersubband electroluminescence

KW - Quantum cascade emitters

KW - Si/SiGe

UR - http://www.scopus.com/inward/record.url?scp=0037371999&partnerID=8YFLogxK

U2 - 10.1016/S1386-9477(02)00689-6

DO - 10.1016/S1386-9477(02)00689-6

M3 - Conference article

AN - SCOPUS:0037371999

VL - 16

SP - 309

EP - 314

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

SN - 1386-9477

IS - 3-4

T2 - Symposium H of the Spring Meeting of the European Materials Research Society

Y2 - 18 June 2002 through 21 June 2002

ER -

Electroluminescence from Si/SiGe quantum cascade emitters

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