Electroluminescence from Si/SiGe quantum cascade emitters

D. J. Paul, S. A. Lynch, R. Bates, Z. Ikonic, R. W. Kelsall, P. Harrison, D. J. Norris, S. L. Liew, A. G. Cullis, P. Murzyn, C. Pidgeon, D. D. Arnone, D. J. Robbins

Research output: Contribution to journalConference articlepeer-review

6 Citations (Scopus)


Intersubband electroluminescence results are presented from Si/SiGe quantum cascade emitters at 3.2 THz and at temperatures up to 150 K. The effect of adding doping into the active quantum wells was studied in addition to reduced barrier widths from previous measurements. While the current through the sample is increased by the addition of doping, the emitted power is reduced through additional free carrier absorption and Coulombic scattering. Free electron laser measurements confirm the intersubband transitions in the quantum wells of the cascade devices and produce non-radiative lifetimes of ∼20 ps between 4 and 150 K.

Original languageEnglish
Pages (from-to)309-314
Number of pages6
JournalPhysica E: Low-Dimensional Systems and Nanostructures
Issue number3-4
Early online date13 Dec 2002
Publication statusPublished - 1 Mar 2003
Externally publishedYes
EventSymposium H of the Spring Meeting of the European Materials Research Society : "Silicon-Based Optoelectronics: Advances and Future Perspectives' - Strasbourgh, France
Duration: 18 Jun 200221 Jun 2002


Dive into the research topics of 'Electroluminescence from Si/SiGe quantum cascade emitters'. Together they form a unique fingerprint.

Cite this