Electron transport in n -doped Si/SiGe quantum cascade structures

I. Lazic, Z. Ikonic, V. Milanovic, R. W. Kelsall, D. Indjin, P. Harrison

Research output: Contribution to journalArticlepeer-review

9 Citations (Scopus)


An electron transport model in n -Si/SiGe quantum cascade or superlattice structures is described. The model uses the electronic structure calculated within the effective-mass complex-energy framework, separately for perpendicular (Xz) and in-plane (Xxy) valleys, the degeneracy of which is lifted by strain, and additionally by size quantization. The transport is then described via scattering between quantized states, using a rate equations approach and tight-binding expansion, taking the coupling with two nearest-neighbor periods. Acoustic phonon, optical phonon, alloy disorder, and interface roughness scattering are taken into account. The calculated current/voltage dependence and gain profiles are presented for two simple superlattice structures.

Original languageEnglish
Article number093703
JournalJournal of Applied Physics
Issue number9
Publication statusPublished - 1 May 2007
Externally publishedYes


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