Electronic Raman scattering from intersubband transitions in GaN/AlGaN quantum wells

M. P. Halsall; B. Sherliker; P. Harrison; V. D. Jovanović; D. Indjin; Z. Ikonić; T. Wang; M. A. Whitehead; P. J. Parbrook

doi:10.1002/pssc.200303385

Electronic Raman scattering from intersubband transitions in GaN/AlGaN quantum wells

M. P. Halsall, B. Sherliker, P. Harrison, V. D. Jovanović, D. Indjin, Z. Ikonić, T. Wang, M. A. Whitehead, P. J. Parbrook

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

We present a Raman scattering study of two GaN/Al_xGa _1-xN multiple quantum well (MQW) structures with x = 0.3 and x = 0.4 and well widths of 6 nm and 4 nm respectively, they were nominally undoped but are expected to contain a low-density, n-type, carrier population due to the residual donors in the barriers. Polarization dependent Raman scattering was performed at room temperature, strong scattering due to in-tersubband transitions (ISBT's) in the GaN quantum wells was observed from both the e ₁-e₂ and e₁-e₃ transitions for both samples. The first sample has an e₁-e₂ transition at 300 meV and e₁-e₃ at 480 meV whilst the second sample has an e₁-e₂ transition at 360 meV and e₁-e ₃ at 580 meV. The full width half maximum of the Raman peaks is lower than that reported in infra-red absorption for similar, heavily doped, MQW structures.

Original language	English
Pages (from-to)	2662-2665
Number of pages	4
Journal	Physica Status Solidi C: Conferences
Volume	0
Issue number	7
Early online date	15 Oct 2003
DOIs	https://doi.org/10.1002/pssc.200303385
Publication status	Published - 1 Dec 2003
Externally published	Yes
Event	5th International Conference on Nitride Semiconductors - Nara, Japan Duration: 25 May 2003 → 30 May 2003 Conference number: 5

Access to Document

10.1002/pssc.200303385Licence: Unspecified

Cite this

@article{aaef1e93cb474e7b808f30a6188cbd6b,

title = "Electronic Raman scattering from intersubband transitions in GaN/AlGaN quantum wells",

abstract = "We present a Raman scattering study of two GaN/AlxGa 1-xN multiple quantum well (MQW) structures with x = 0.3 and x = 0.4 and well widths of 6 nm and 4 nm respectively, they were nominally undoped but are expected to contain a low-density, n-type, carrier population due to the residual donors in the barriers. Polarization dependent Raman scattering was performed at room temperature, strong scattering due to in-tersubband transitions (ISBT's) in the GaN quantum wells was observed from both the e 1-e2 and e1-e3 transitions for both samples. The first sample has an e1-e2 transition at 300 meV and e1-e3 at 480 meV whilst the second sample has an e1-e2 transition at 360 meV and e1-e 3 at 580 meV. The full width half maximum of the Raman peaks is lower than that reported in infra-red absorption for similar, heavily doped, MQW structures.",

keywords = "73.21.Fg, 78.30.Fs, Nitrides, Raman scattering",

author = "Halsall, {M. P.} and B. Sherliker and P. Harrison and Jovanovi{\'c}, {V. D.} and D. Indjin and Z. Ikoni{\'c} and T. Wang and Whitehead, {M. A.} and Parbrook, {P. J.}",

year = "2003",

month = dec,

day = "1",

doi = "10.1002/pssc.200303385",

language = "English",

volume = "0",

pages = "2662--2665",

journal = "Physica Status Solidi C: Conferences",

issn = "1862-6351",

publisher = "Wiley-VCH Verlag",

number = "7",

note = "5th International Conference on Nitride Semiconductors, ICNS-5 2003 ; Conference date: 25-05-2003 Through 30-05-2003",

}

TY - JOUR

T1 - Electronic Raman scattering from intersubband transitions in GaN/AlGaN quantum wells

AU - Halsall, M. P.

AU - Sherliker, B.

AU - Harrison, P.

AU - Jovanović, V. D.

AU - Indjin, D.

AU - Ikonić, Z.

AU - Wang, T.

AU - Whitehead, M. A.

AU - Parbrook, P. J.

N1 - Conference code: 5

PY - 2003/12/1

Y1 - 2003/12/1

N2 - We present a Raman scattering study of two GaN/AlxGa 1-xN multiple quantum well (MQW) structures with x = 0.3 and x = 0.4 and well widths of 6 nm and 4 nm respectively, they were nominally undoped but are expected to contain a low-density, n-type, carrier population due to the residual donors in the barriers. Polarization dependent Raman scattering was performed at room temperature, strong scattering due to in-tersubband transitions (ISBT's) in the GaN quantum wells was observed from both the e 1-e2 and e1-e3 transitions for both samples. The first sample has an e1-e2 transition at 300 meV and e1-e3 at 480 meV whilst the second sample has an e1-e2 transition at 360 meV and e1-e 3 at 580 meV. The full width half maximum of the Raman peaks is lower than that reported in infra-red absorption for similar, heavily doped, MQW structures.

AB - We present a Raman scattering study of two GaN/AlxGa 1-xN multiple quantum well (MQW) structures with x = 0.3 and x = 0.4 and well widths of 6 nm and 4 nm respectively, they were nominally undoped but are expected to contain a low-density, n-type, carrier population due to the residual donors in the barriers. Polarization dependent Raman scattering was performed at room temperature, strong scattering due to in-tersubband transitions (ISBT's) in the GaN quantum wells was observed from both the e 1-e2 and e1-e3 transitions for both samples. The first sample has an e1-e2 transition at 300 meV and e1-e3 at 480 meV whilst the second sample has an e1-e2 transition at 360 meV and e1-e 3 at 580 meV. The full width half maximum of the Raman peaks is lower than that reported in infra-red absorption for similar, heavily doped, MQW structures.

KW - 73.21.Fg

KW - 78.30.Fs

KW - Nitrides

KW - Raman scattering

UR - http://www.scopus.com/inward/record.url?scp=84875088930&partnerID=8YFLogxK

U2 - 10.1002/pssc.200303385

DO - 10.1002/pssc.200303385

M3 - Conference article

AN - SCOPUS:84875088930

VL - 0

SP - 2662

EP - 2665

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

SN - 1862-6351

IS - 7

T2 - 5th International Conference on Nitride Semiconductors

Y2 - 25 May 2003 through 30 May 2003

ER -

Electronic Raman scattering from intersubband transitions in GaN/AlGaN quantum wells

Abstract

Access to Document

Other files and links

Fingerprint

Cite this