Emittance Considerations in Ion Source Design and Operation

S. Povall, D. Burgin, C. E.A. Cook, R. D. Goldberg, A. J.T. Holmes, D. Arnold, J. A. Van Den Berg, D. G. Armour

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Citations (Scopus)


In any ion beam system relevant to high current ion implantation, the ion source itself is the single most important component in that it determines the minimum emittance of the beam and hence the feasibility of obtaining a specified beam current, physical size and angular spread at the wafer position. The effects of emittance are fundamental and cannot be overcome by ion optical operations on the beam following extraction. The ion sources that have been developed for high current, production ion implanters are required to provide effective molecular cracking and, in some cases, high multiple charge state fractions. In the present work, the effect of achieving these properties on the beam quality has been studied for sources based on the widely used Bernas design.

Original languageEnglish
Title of host publication2000 International Conference on Ion Implantation Technology
Subtitle of host publicationIIT 2000 - Proceedings
EditorsHeiner Ryssel, Lothar Frey, Jozsef Gyulai, Hans Glawischnig
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages4
ISBN (Print)0780364627, 9780780364622
Publication statusPublished - 2000
Externally publishedYes
Event13th IEEE International Conference on Ion Implantation Technology - Alpbach, Austria
Duration: 17 Sep 200022 Sep 2000
Conference number: 13


Conference13th IEEE International Conference on Ion Implantation Technology
Abbreviated titleIIT 2000
Internet address


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