Emittance Considerations in Ion Source Design and Operation

S. Povall; D. Burgin; C. E.A. Cook; R. D. Goldberg; A. J.T. Holmes; D. Arnold; J. A. Van Den Berg; D. G. Armour

doi:10.1109/.2000.924206

Emittance Considerations in Ion Source Design and Operation

S. Povall, D. Burgin, C. E.A. Cook, R. D. Goldberg, A. J.T. Holmes, D. Arnold, J. A. Van Den Berg, D. G. Armour

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Citations (Scopus)

Abstract

In any ion beam system relevant to high current ion implantation, the ion source itself is the single most important component in that it determines the minimum emittance of the beam and hence the feasibility of obtaining a specified beam current, physical size and angular spread at the wafer position. The effects of emittance are fundamental and cannot be overcome by ion optical operations on the beam following extraction. The ion sources that have been developed for high current, production ion implanters are required to provide effective molecular cracking and, in some cases, high multiple charge state fractions. In the present work, the effect of achieving these properties on the beam quality has been studied for sources based on the widely used Bernas design.

Original language	English
Title of host publication	2000 International Conference on Ion Implantation Technology
Subtitle of host publication	IIT 2000 - Proceedings
Editors	Heiner Ryssel, Lothar Frey, Jozsef Gyulai, Hans Glawischnig
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	530-533
Number of pages	4
ISBN (Print)	0780364627, 9780780364622
DOIs	https://doi.org/10.1109/.2000.924206
Publication status	Published - 2000
Externally published	Yes
Event	13th IEEE International Conference on Ion Implantation Technology - Alpbach, Austria Duration: 17 Sep 2000 → 22 Sep 2000 Conference number: 13 https://www.worldcat.org/title/ion-implantation-technology-2000-2000-international-conference-on-ion-implantation-technology-proceedings-alpbach-austria-17-22-september-2000/oclc/928804789

Conference

Conference	13th IEEE International Conference on Ion Implantation Technology
Abbreviated title	IIT 2000
Country/Territory	Austria
City	Alpbach
Period	17/09/00 → 22/09/00
Internet address	https://www.worldcat.org/title/ion-implantation-technology-2000-2000-international-conference-on-ion-implantation-technology-proceedings-alpbach-austria-17-22-september-2000/oclc/928804789

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Povall, S., Burgin, D., Cook, C. E. A., Goldberg, R. D., Holmes, A. J. T., Arnold, D., Van Den Berg, J. A., & Armour, D. G. (2000). Emittance Considerations in Ion Source Design and Operation. In H. Ryssel, L. Frey, J. Gyulai, & H. Glawischnig (Eds.), 2000 International Conference on Ion Implantation Technology: IIT 2000 - Proceedings (pp. 530-533). [924206] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/.2000.924206

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title = "Emittance Considerations in Ion Source Design and Operation",

abstract = "In any ion beam system relevant to high current ion implantation, the ion source itself is the single most important component in that it determines the minimum emittance of the beam and hence the feasibility of obtaining a specified beam current, physical size and angular spread at the wafer position. The effects of emittance are fundamental and cannot be overcome by ion optical operations on the beam following extraction. The ion sources that have been developed for high current, production ion implanters are required to provide effective molecular cracking and, in some cases, high multiple charge state fractions. In the present work, the effect of achieving these properties on the beam quality has been studied for sources based on the widely used Bernas design.",

keywords = "ion sources, plasma temperature, plasma sources, ion beams, production, space charge, shape control, plasma immersion ion implantation, particle beams, implants",

author = "S. Povall and D. Burgin and Cook, {C. E.A.} and Goldberg, {R. D.} and Holmes, {A. J.T.} and D. Arnold and {Van Den Berg}, {J. A.} and Armour, {D. G.}",

year = "2000",

doi = "10.1109/.2000.924206",

language = "English",

isbn = "0780364627",

pages = "530--533",

editor = "Heiner Ryssel and Lothar Frey and Jozsef Gyulai and Hans Glawischnig",

booktitle = "2000 International Conference on Ion Implantation Technology",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "13th IEEE International Conference on Ion Implantation Technology, IIT 2000 ; Conference date: 17-09-2000 Through 22-09-2000",

url = "https://www.worldcat.org/title/ion-implantation-technology-2000-2000-international-conference-on-ion-implantation-technology-proceedings-alpbach-austria-17-22-september-2000/oclc/928804789",

}

Povall, S, Burgin, D, Cook, CEA, Goldberg, RD, Holmes, AJT, Arnold, D, Van Den Berg, JA & Armour, DG 2000, Emittance Considerations in Ion Source Design and Operation. in H Ryssel, L Frey, J Gyulai & H Glawischnig (eds), 2000 International Conference on Ion Implantation Technology: IIT 2000 - Proceedings., 924206, Institute of Electrical and Electronics Engineers Inc., pp. 530-533, 13th IEEE International Conference on Ion Implantation Technology, Alpbach, Austria, 17/09/00. https://doi.org/10.1109/.2000.924206

Emittance Considerations in Ion Source Design and Operation. / Povall, S.; Burgin, D.; Cook, C. E.A. et al.

2000 International Conference on Ion Implantation Technology: IIT 2000 - Proceedings. ed. / Heiner Ryssel; Lothar Frey; Jozsef Gyulai; Hans Glawischnig. Institute of Electrical and Electronics Engineers Inc., 2000. p. 530-533 924206.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Emittance Considerations in Ion Source Design and Operation

AU - Povall, S.

AU - Burgin, D.

AU - Cook, C. E.A.

AU - Goldberg, R. D.

AU - Holmes, A. J.T.

AU - Arnold, D.

AU - Van Den Berg, J. A.

AU - Armour, D. G.

N1 - Conference code: 13

PY - 2000

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N2 - In any ion beam system relevant to high current ion implantation, the ion source itself is the single most important component in that it determines the minimum emittance of the beam and hence the feasibility of obtaining a specified beam current, physical size and angular spread at the wafer position. The effects of emittance are fundamental and cannot be overcome by ion optical operations on the beam following extraction. The ion sources that have been developed for high current, production ion implanters are required to provide effective molecular cracking and, in some cases, high multiple charge state fractions. In the present work, the effect of achieving these properties on the beam quality has been studied for sources based on the widely used Bernas design.

AB - In any ion beam system relevant to high current ion implantation, the ion source itself is the single most important component in that it determines the minimum emittance of the beam and hence the feasibility of obtaining a specified beam current, physical size and angular spread at the wafer position. The effects of emittance are fundamental and cannot be overcome by ion optical operations on the beam following extraction. The ion sources that have been developed for high current, production ion implanters are required to provide effective molecular cracking and, in some cases, high multiple charge state fractions. In the present work, the effect of achieving these properties on the beam quality has been studied for sources based on the widely used Bernas design.

KW - ion sources

KW - plasma temperature

KW - plasma sources

KW - ion beams

KW - production

KW - space charge

KW - shape control

KW - plasma immersion ion implantation

KW - particle beams

KW - implants

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DO - 10.1109/.2000.924206

M3 - Conference contribution

AN - SCOPUS:78649848363

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SN - 9780780364622

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EP - 533

BT - 2000 International Conference on Ion Implantation Technology

A2 - Ryssel, Heiner

A2 - Frey, Lothar

A2 - Gyulai, Jozsef

A2 - Glawischnig, Hans

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 13th IEEE International Conference on Ion Implantation Technology

Y2 - 17 September 2000 through 22 September 2000

ER -

Povall S, Burgin D, Cook CEA, Goldberg RD, Holmes AJT, Arnold D et al. Emittance Considerations in Ion Source Design and Operation. In Ryssel H, Frey L, Gyulai J, Glawischnig H, editors, 2000 International Conference on Ion Implantation Technology: IIT 2000 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2000. p. 530-533. 924206 doi: 10.1109/.2000.924206

Emittance Considerations in Ion Source Design and Operation

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