TY - JOUR
T1 - Engineering the electron-phonon scattering rates in the active regions of quantum cascade lasers operating beyond 30 μm
AU - Harrison, P.
PY - 1997/11/1
Y1 - 1997/11/1
N2 - This theoretical work explores an aspect of carrier scattering rate design in the active region of intersubband quantum cascade lasers operating in the far-infrared (30-300 μm) or terahertz (1-10 THz) region of the spectrum, namely the depopulation of the lower laser level. Envelope function calculations of eigenstates and non-radiative scattering rates are presented for the active layer of an intersubband laser under the influence of an electric field and at room temperature. Two methods of depopulating the lower laser level to engineer a population inversion are explored, namely depopulation by resonant longitudinal optic phonon emission and depopulation to a strongly coupled state, as can occur at an anti-crossing.
AB - This theoretical work explores an aspect of carrier scattering rate design in the active region of intersubband quantum cascade lasers operating in the far-infrared (30-300 μm) or terahertz (1-10 THz) region of the spectrum, namely the depopulation of the lower laser level. Envelope function calculations of eigenstates and non-radiative scattering rates are presented for the active layer of an intersubband laser under the influence of an electric field and at room temperature. Two methods of depopulating the lower laser level to engineer a population inversion are explored, namely depopulation by resonant longitudinal optic phonon emission and depopulation to a strongly coupled state, as can occur at an anti-crossing.
KW - Quantum cascade laser
KW - Far infrared
KW - Terahertz (THz)
UR - http://www.scopus.com/inward/record.url?scp=0008140823&partnerID=8YFLogxK
U2 - 10.1088/0268-1242/12/11/027
DO - 10.1088/0268-1242/12/11/027
M3 - Article
AN - SCOPUS:0008140823
VL - 12
SP - 1487
EP - 1490
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 11
ER -