Evidence for competing growth phases in ion-beam-deposited epitaxial silicon films

Kevin G. Orrman-Rossiter, D. R G Mitchell, S. E. Donnelly, C. J. Rossouw, S. R. Glanvill, P. R. Miller, Amir H. Al-Bayati, J. A. Van Den Berg, D. G. Armour

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Epitaxial crystal growth using an energy- and mass-analysed ion beam can provide insights into the fundamental processes involved in thin-film growth. In these experiments layers of silicon were deposited onto (001) silicon substrates using 30 eV and 50 eV28Si+ions. This Letter reports on the use of ultramicrotomy and high-resolution transmission electron microscopy to obtain lattice images of ion- beam-deposited epitaxial silicon films. The lattice images show that film growth proceeds via a competition between epitaxial and amorphous phases, similar to island (Volmer-Weber) growth. Electron energy loss and ion scattering measurements show that, although the film is epitaxial, it contains defect structures. The lattice images indicate that a sufficient amount of the native oxide layer could be removed simply using low-energy28Si+bombardment to enable epitaxial growth. In the case of samples etched in situ by low-energy chlorine ions, initial epitaxial growth gave way to an amorphous growth phase after ͌7-5nm.

Original languageEnglish
Pages (from-to)311-318
Number of pages8
JournalPhilosophical Magazine Letters
Volume61
Issue number6
DOIs
Publication statusPublished - Jun 1990
Externally publishedYes

Fingerprint

Silicon
silicon films
Epitaxial growth
Ion beams
ion beams
Film growth
Ions
Defect structures
Epitaxial films
Chlorine
High resolution transmission electron microscopy
Crystallization
Crystal growth
Oxides
Energy dissipation
Scattering
Thin films
Electrons
ion scattering
silicon

Cite this

Orrman-Rossiter, K. G., Mitchell, D. R. G., Donnelly, S. E., Rossouw, C. J., Glanvill, S. R., Miller, P. R., ... Armour, D. G. (1990). Evidence for competing growth phases in ion-beam-deposited epitaxial silicon films. Philosophical Magazine Letters, 61(6), 311-318. https://doi.org/10.1080/09500839008206498
Orrman-Rossiter, Kevin G. ; Mitchell, D. R G ; Donnelly, S. E. ; Rossouw, C. J. ; Glanvill, S. R. ; Miller, P. R. ; Al-Bayati, Amir H. ; Van Den Berg, J. A. ; Armour, D. G. / Evidence for competing growth phases in ion-beam-deposited epitaxial silicon films. In: Philosophical Magazine Letters. 1990 ; Vol. 61, No. 6. pp. 311-318.
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Orrman-Rossiter, KG, Mitchell, DRG, Donnelly, SE, Rossouw, CJ, Glanvill, SR, Miller, PR, Al-Bayati, AH, Van Den Berg, JA & Armour, DG 1990, 'Evidence for competing growth phases in ion-beam-deposited epitaxial silicon films', Philosophical Magazine Letters, vol. 61, no. 6, pp. 311-318. https://doi.org/10.1080/09500839008206498

Evidence for competing growth phases in ion-beam-deposited epitaxial silicon films. / Orrman-Rossiter, Kevin G.; Mitchell, D. R G; Donnelly, S. E.; Rossouw, C. J.; Glanvill, S. R.; Miller, P. R.; Al-Bayati, Amir H.; Van Den Berg, J. A.; Armour, D. G.

In: Philosophical Magazine Letters, Vol. 61, No. 6, 06.1990, p. 311-318.

Research output: Contribution to journalArticle

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AU - Glanvill, S. R.

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