Evidence of a charge induced contribution to the sputtering yield of insulating and semiconducting materials

A. J. Eccles, J. A. Van Den Berg, A. Brown, J. C. Vickerman

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

Following the recent observation in this laboratory of a charge induced damage effect in insulators under inert gas ion bombardment, the influence of the charge state of the beam (ion or atom) on the sputtering yield of insulating and semiconducting materials has been investigated. A series of sputter measurements has been carried out on Au, Ta2O5, Si, GaAs, and glass using calibrated ion and atom fluxes. For this purpose a recently developed gun capable of producing raster-scanned, microfocused energetic ion or atom beams was employed. While for the conductor Au, as expected, no effect was seen, for the remaining materials sputter yield increases of up to 150% were observed under ion bombardment which implies the existence of a substantial electronic sputtering effect in insulators and semiconductors due to low-energy ion bombardment.

LanguageEnglish
Pages188-190
Number of pages3
JournalApplied Physics Letters
Volume49
Issue number4
DOIs
Publication statusPublished - 28 Jul 1986
Externally publishedYes

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insulation
sputtering
bombardment
ions
ion beams
insulators
atoms
rare gases
conductors
damage
glass
electronics
energy

Cite this

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Evidence of a charge induced contribution to the sputtering yield of insulating and semiconducting materials. / Eccles, A. J.; Van Den Berg, J. A.; Brown, A.; Vickerman, J. C.

In: Applied Physics Letters, Vol. 49, No. 4, 28.07.1986, p. 188-190.

Research output: Contribution to journalArticle

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