Excitonic and impurity-related optical transitions in Be δ-doped GaAsAlAs multiple quantum wells: Fractional-dimensional space approach

J. Kundrotas, A. Čerškus, S. Ašmontas, G. Valušis, B. Sherliker, M. P. Halsall, M. J. Steer, E. Johannessen, P. Harrison

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37 Citations (Scopus)

Abstract

We have investigated the optical transitions in Be δ-doped GaAsAlAs multiple quantum wells with various width and doping levels. The fractional dimensionality model was extended to describe free-electron-acceptor (free hole-donor) transitions in a quantum well. The measured photoluminescence spectra from the samples were interpreted within the framework of this model, and acceptor-impurity induced effects in the photoluminescence line shapes from multiple quantum wells of different widths were demonstrated.

Original languageEnglish
Article number235322
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume72
Issue number23
DOIs
Publication statusPublished - 15 Dec 2005
Externally publishedYes

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