Experimental and theoretical studies of the build-up of an oxide layer during oxygen ion bombardment of silicon

J. A. Kilner, S. D. Littlewood, R. Badheka, M. Wadsworth, J. A. Van Den Berg, D. G. Armour

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Detailed experimental studies of the build-up of a stoichiometric SiO2 layer in silicon substrates during bombardment with 15 keV 18O+ and 16O+ ions have provided a valuable insight into the implantation, sputtering and desorption processes that occur during the formation of a continuous surface oxide layer. The use of the two isotopes also enables the dependence of the oxygen-sputtered ion yield to be evaluated and hence enables the experimentally measured profiles to be stimulated. The initial 15 keV O+ implantation and subsequent secondary-ion mass spectrometry depth profiling using 3 keV Xe+ have been simulated using the IMPETUS code and excellent agreement has been obtained. The code takes into account sputtering, atomic mixing, collective effects to conserve packing density constraints, stoichiometry factors and desorption effects.

LanguageEnglish
Pages83-89
Number of pages7
JournalMaterials Science and Engineering B
Volume12
Issue number1-2
DOIs
Publication statusPublished - 20 Jan 1992
Externally publishedYes

Fingerprint

Silicon
Ion bombardment
oxygen ions
Oxides
Sputtering
bombardment
Desorption
implantation
sputtering
desorption
Ions
Oxygen
oxides
Depth profiling
packing density
silicon
Secondary ion mass spectrometry
Isotopes
Ion implantation
Stoichiometry

Cite this

Kilner, J. A. ; Littlewood, S. D. ; Badheka, R. ; Wadsworth, M. ; Van Den Berg, J. A. ; Armour, D. G. / Experimental and theoretical studies of the build-up of an oxide layer during oxygen ion bombardment of silicon. In: Materials Science and Engineering B. 1992 ; Vol. 12, No. 1-2. pp. 83-89.
@article{44ef540184114657b7e2e8f986b04f6e,
title = "Experimental and theoretical studies of the build-up of an oxide layer during oxygen ion bombardment of silicon",
abstract = "Detailed experimental studies of the build-up of a stoichiometric SiO2 layer in silicon substrates during bombardment with 15 keV 18O+ and 16O+ ions have provided a valuable insight into the implantation, sputtering and desorption processes that occur during the formation of a continuous surface oxide layer. The use of the two isotopes also enables the dependence of the oxygen-sputtered ion yield to be evaluated and hence enables the experimentally measured profiles to be stimulated. The initial 15 keV O+ implantation and subsequent secondary-ion mass spectrometry depth profiling using 3 keV Xe+ have been simulated using the IMPETUS code and excellent agreement has been obtained. The code takes into account sputtering, atomic mixing, collective effects to conserve packing density constraints, stoichiometry factors and desorption effects.",
author = "Kilner, {J. A.} and Littlewood, {S. D.} and R. Badheka and M. Wadsworth and {Van Den Berg}, {J. A.} and Armour, {D. G.}",
year = "1992",
month = "1",
day = "20",
doi = "10.1016/0921-5107(92)90264-A",
language = "English",
volume = "12",
pages = "83--89",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "1-2",

}

Experimental and theoretical studies of the build-up of an oxide layer during oxygen ion bombardment of silicon. / Kilner, J. A.; Littlewood, S. D.; Badheka, R.; Wadsworth, M.; Van Den Berg, J. A.; Armour, D. G.

In: Materials Science and Engineering B, Vol. 12, No. 1-2, 20.01.1992, p. 83-89.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Experimental and theoretical studies of the build-up of an oxide layer during oxygen ion bombardment of silicon

AU - Kilner, J. A.

AU - Littlewood, S. D.

AU - Badheka, R.

AU - Wadsworth, M.

AU - Van Den Berg, J. A.

AU - Armour, D. G.

PY - 1992/1/20

Y1 - 1992/1/20

N2 - Detailed experimental studies of the build-up of a stoichiometric SiO2 layer in silicon substrates during bombardment with 15 keV 18O+ and 16O+ ions have provided a valuable insight into the implantation, sputtering and desorption processes that occur during the formation of a continuous surface oxide layer. The use of the two isotopes also enables the dependence of the oxygen-sputtered ion yield to be evaluated and hence enables the experimentally measured profiles to be stimulated. The initial 15 keV O+ implantation and subsequent secondary-ion mass spectrometry depth profiling using 3 keV Xe+ have been simulated using the IMPETUS code and excellent agreement has been obtained. The code takes into account sputtering, atomic mixing, collective effects to conserve packing density constraints, stoichiometry factors and desorption effects.

AB - Detailed experimental studies of the build-up of a stoichiometric SiO2 layer in silicon substrates during bombardment with 15 keV 18O+ and 16O+ ions have provided a valuable insight into the implantation, sputtering and desorption processes that occur during the formation of a continuous surface oxide layer. The use of the two isotopes also enables the dependence of the oxygen-sputtered ion yield to be evaluated and hence enables the experimentally measured profiles to be stimulated. The initial 15 keV O+ implantation and subsequent secondary-ion mass spectrometry depth profiling using 3 keV Xe+ have been simulated using the IMPETUS code and excellent agreement has been obtained. The code takes into account sputtering, atomic mixing, collective effects to conserve packing density constraints, stoichiometry factors and desorption effects.

UR - http://www.scopus.com/inward/record.url?scp=0026679966&partnerID=8YFLogxK

U2 - 10.1016/0921-5107(92)90264-A

DO - 10.1016/0921-5107(92)90264-A

M3 - Article

VL - 12

SP - 83

EP - 89

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

T2 - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 1-2

ER -