Abstract
Detailed experimental studies of the build-up of a stoichiometric SiO2 layer in silicon substrates during bombardment with 15 keV 18O+ and 16O+ ions have provided a valuable insight into the implantation, sputtering and desorption processes that occur during the formation of a continuous surface oxide layer. The use of the two isotopes also enables the dependence of the oxygen-sputtered ion yield to be evaluated and hence enables the experimentally measured profiles to be stimulated. The initial 15 keV O+ implantation and subsequent secondary-ion mass spectrometry depth profiling using 3 keV Xe+ have been simulated using the IMPETUS code and excellent agreement has been obtained. The code takes into account sputtering, atomic mixing, collective effects to conserve packing density constraints, stoichiometry factors and desorption effects.
| Language | English |
|---|---|
| Pages | 83-89 |
| Number of pages | 7 |
| Journal | Materials Science and Engineering B |
| Volume | 12 |
| Issue number | 1-2 |
| DOIs | |
| Publication status | Published - 20 Jan 1992 |
| Externally published | Yes |
Fingerprint
Cite this
}
Experimental and theoretical studies of the build-up of an oxide layer during oxygen ion bombardment of silicon. / Kilner, J. A.; Littlewood, S. D.; Badheka, R.; Wadsworth, M.; Van Den Berg, J. A.; Armour, D. G.
In: Materials Science and Engineering B, Vol. 12, No. 1-2, 20.01.1992, p. 83-89.Research output: Contribution to journal › Article
TY - JOUR
T1 - Experimental and theoretical studies of the build-up of an oxide layer during oxygen ion bombardment of silicon
AU - Kilner, J. A.
AU - Littlewood, S. D.
AU - Badheka, R.
AU - Wadsworth, M.
AU - Van Den Berg, J. A.
AU - Armour, D. G.
PY - 1992/1/20
Y1 - 1992/1/20
N2 - Detailed experimental studies of the build-up of a stoichiometric SiO2 layer in silicon substrates during bombardment with 15 keV 18O+ and 16O+ ions have provided a valuable insight into the implantation, sputtering and desorption processes that occur during the formation of a continuous surface oxide layer. The use of the two isotopes also enables the dependence of the oxygen-sputtered ion yield to be evaluated and hence enables the experimentally measured profiles to be stimulated. The initial 15 keV O+ implantation and subsequent secondary-ion mass spectrometry depth profiling using 3 keV Xe+ have been simulated using the IMPETUS code and excellent agreement has been obtained. The code takes into account sputtering, atomic mixing, collective effects to conserve packing density constraints, stoichiometry factors and desorption effects.
AB - Detailed experimental studies of the build-up of a stoichiometric SiO2 layer in silicon substrates during bombardment with 15 keV 18O+ and 16O+ ions have provided a valuable insight into the implantation, sputtering and desorption processes that occur during the formation of a continuous surface oxide layer. The use of the two isotopes also enables the dependence of the oxygen-sputtered ion yield to be evaluated and hence enables the experimentally measured profiles to be stimulated. The initial 15 keV O+ implantation and subsequent secondary-ion mass spectrometry depth profiling using 3 keV Xe+ have been simulated using the IMPETUS code and excellent agreement has been obtained. The code takes into account sputtering, atomic mixing, collective effects to conserve packing density constraints, stoichiometry factors and desorption effects.
UR - http://www.scopus.com/inward/record.url?scp=0026679966&partnerID=8YFLogxK
U2 - 10.1016/0921-5107(92)90264-A
DO - 10.1016/0921-5107(92)90264-A
M3 - Article
VL - 12
SP - 83
EP - 89
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
T2 - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
SN - 0921-5107
IS - 1-2
ER -