Experimental and theoretical studies of the build-up of an oxide layer during oxygen ion bombardment of silicon

J. A. Kilner, S. D. Littlewood, R. Badheka, M. Wadsworth, J. A. Van Den Berg, D. G. Armour

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

Detailed experimental studies of the build-up of a stoichiometric SiO2 layer in silicon substrates during bombardment with 15 keV 18O+ and 16O+ ions have provided a valuable insight into the implantation, sputtering and desorption processes that occur during the formation of a continuous surface oxide layer. The use of the two isotopes also enables the dependence of the oxygen-sputtered ion yield to be evaluated and hence enables the experimentally measured profiles to be stimulated. The initial 15 keV O+ implantation and subsequent secondary-ion mass spectrometry depth profiling using 3 keV Xe+ have been simulated using the IMPETUS code and excellent agreement has been obtained. The code takes into account sputtering, atomic mixing, collective effects to conserve packing density constraints, stoichiometry factors and desorption effects.

Original languageEnglish
Pages (from-to)83-89
Number of pages7
JournalMaterials Science and Engineering B
Volume12
Issue number1-2
DOIs
Publication statusPublished - 20 Jan 1992
Externally publishedYes

Fingerprint Dive into the research topics of 'Experimental and theoretical studies of the build-up of an oxide layer during oxygen ion bombardment of silicon'. Together they form a unique fingerprint.

  • Cite this