Abstract
We present a photoluminescence study of optical transitions in Be acceptor-doped GaAs/AlAs multiple quantum wells at room and liquid nitrogen temperatures. We investigate excitonic spectra and reveal acceptor-impurity induced effects in multiple quantum wells having different width.
Original language | English |
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Pages (from-to) | 245-249 |
Number of pages | 5 |
Journal | Acta Physica Polonica A |
Volume | 107 |
Issue number | 2 |
DOIs | |
Publication status | Published - 1 Feb 2005 |
Externally published | Yes |
Event | 12th International Symposium on Ultrafast Phenomena in Semiconductors - Vilnius, Lithuania Duration: 22 Aug 2004 → 25 Aug 2004 Conference number: 12 http://przyrbwn.icm.edu.pl/APP/SPIS/a107-1.html |