Experimental study of optical transitions in Be-doped GaAs/AlAs multiple quantum wells

J. Kundrotas, A. Čerškus, S. Ašmontas, G. Valušis, B. Sherliker, M. P. Halsall, P. Harrison, M. J. Steer

Research output: Contribution to journalConference articlepeer-review

3 Citations (Scopus)

Abstract

We present a photoluminescence study of optical transitions in Be acceptor-doped GaAs/AlAs multiple quantum wells at room and liquid nitrogen temperatures. We investigate excitonic spectra and reveal acceptor-impurity induced effects in multiple quantum wells having different width.

Original languageEnglish
Pages (from-to)245-249
Number of pages5
JournalActa Physica Polonica A
Volume107
Issue number2
DOIs
Publication statusPublished - 1 Feb 2005
Externally publishedYes
Event12th International Symposium on Ultrafast Phenomena in Semiconductors - Vilnius, Lithuania
Duration: 22 Aug 200425 Aug 2004
Conference number: 12
http://przyrbwn.icm.edu.pl/APP/SPIS/a107-1.html

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