Abstract
Following helium implantation (50 keV, 5 × 1016 cm -2) at 800 °C in silicon, only {1 1 3} defects are present spreading out beyond the maximum of the damage distribution. Both linear rod-like defects as well as so-called ribbon-like {1 1 3} defects are observed. During annealing at 800 °C, the number of interstitials in ribbon-like defects appears to increase at the expense of the rod-like defects. After annealing at 1000 °C, only a row of dislocation loops is observed. These results suggest that the formation energy of the ribbon-like defects may be lower than that of the rod-like defects.
Original language | English |
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Pages (from-to) | 565-567 |
Number of pages | 3 |
Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
Volume | 242 |
Issue number | 1-2 |
Early online date | 6 Oct 2005 |
DOIs | |
Publication status | Published - 1 Jan 2006 |
Externally published | Yes |