Extended-type defects created by high temperature helium implantation into silicon

M. F. Beaufort, S. E. Donnelly, S. Rousselet, M. L. David, J. F. Barbot

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Following helium implantation (50 keV, 5 × 1016 cm -2) at 800 °C in silicon, only {1 1 3} defects are present spreading out beyond the maximum of the damage distribution. Both linear rod-like defects as well as so-called ribbon-like {1 1 3} defects are observed. During annealing at 800 °C, the number of interstitials in ribbon-like defects appears to increase at the expense of the rod-like defects. After annealing at 1000 °C, only a row of dislocation loops is observed. These results suggest that the formation energy of the ribbon-like defects may be lower than that of the rod-like defects.

Original languageEnglish
Pages (from-to)565-567
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number1-2
Early online date6 Oct 2005
Publication statusPublished - 1 Jan 2006
Externally publishedYes


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