Extended-type defects created by high temperature helium implantation into silicon

M. F. Beaufort, S. E. Donnelly, S. Rousselet, M. L. David, J. F. Barbot

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Following helium implantation (50 keV, 5 × 1016 cm -2) at 800 °C in silicon, only {1 1 3} defects are present spreading out beyond the maximum of the damage distribution. Both linear rod-like defects as well as so-called ribbon-like {1 1 3} defects are observed. During annealing at 800 °C, the number of interstitials in ribbon-like defects appears to increase at the expense of the rod-like defects. After annealing at 1000 °C, only a row of dislocation loops is observed. These results suggest that the formation energy of the ribbon-like defects may be lower than that of the rod-like defects.

LanguageEnglish
Pages565-567
Number of pages3
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume242
Issue number1-2
Early online date6 Oct 2005
DOIs
Publication statusPublished - 1 Jan 2006
Externally publishedYes

Fingerprint

Helium
implantation
helium
Silicon
Defects
defects
silicon
ribbons
rods
Temperature
Annealing
annealing
energy of formation
interstitials
damage

Cite this

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Extended-type defects created by high temperature helium implantation into silicon. / Beaufort, M. F.; Donnelly, S. E.; Rousselet, S.; David, M. L.; Barbot, J. F.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 242, No. 1-2, 01.01.2006, p. 565-567.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Extended-type defects created by high temperature helium implantation into silicon

AU - Beaufort, M. F.

AU - Donnelly, S. E.

AU - Rousselet, S.

AU - David, M. L.

AU - Barbot, J. F.

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